SUM110N06-3m4L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r () I (A) (BR)DSS DS(on) D 100 % R Tested g RoHS 0.0034 at V = 10 V GS a COMPLIANT 60 110 0.0041 at V = 4.5 V GS D TO-263 G G D S Top View S Ordering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free) N-ChannelMOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 60 DS V V Gate-Source Voltage 20 GS a T = 25 C C 110 Continuous Drain Current (T = 175 C) I J D a T = 125 C C 110 A I Pulsed Drain Current 440 DM I Avalanche Current, Single Pulse 75 AS Avalanche Energy, Single Pulse L = 0.1 mH E 280 mJ AS b T = 25 C 375 C P Maximum Power Dissipation W D c T = 25 C 3.75 A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Unit c R Junction-to-Ambient 40 PCB Mount thJA C/W R Junction-to-Case (Drain) 0.4 thJC Notes: a. Package limited. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). Document Number: 73036 www.vishay.com S-80272-Rev. B, 11-Feb-08 1SUM110N06-3m4L Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 (BR)DSS GS D V Gate Threshold Voltage V V = V , I = 250 A 13 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS A I Zero Gate Voltage Drain Current V = 60 V, V = 0 V, T = 125 C 50 DSS DS GS J V = 60 V, V = 0 V, T = 175 C 10 mA DS GS J a I V 5 V, V = 10 V 120 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.0028 0.0034 GS D V = 4.5 V, I = 20 A 0.0033 0.0041 GS D a r Drain-Source On-State Resistance DS(on) V = 10 V, I = 30 A, T = 125 C 0.0055 GS D J V = 10 V, I = 30 A, T = 175 C 0.007 GS D J a g V = 15 V, I = 30 A 30 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 12900 iss C V = 0 V, V = 25 V, f = 1 MHz Output Capacitance 1060 pF oss GS DS Reverse Transfer Capacitance C 700 rss c Q 200 300 Total Gate Charge g c V = 30 V, V = 10 V, I = 110 A Q 50 nC Gate-Source Charge DS GS D gs c Q 33 Gate-Drain Charge gd Gate Resistance R f = 1.0 MHz 0.65 1.3 2 g c t 22 35 Turn-On Delay Time d(on) c V = 30 V, R = 0.4 t 130 200 Rise Time DD L r ns c I 110 A, V = 10 V, R = 2.5 t 110 165 Turn-Off Delay Time D GEN g d(off) c t 280 420 Fall Time f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 110 S A Pulsed Current I 440 SM a V I = 110 A, V = 0 V Forward Voltage 1.0 1.5 V SD F GS t Reverse Recovery Time 55 82 ns rr I I = 110 A, di/dt = 100 A/s Peak Reverse Recovery Charge 3.6 5.4 A RM(REC) F Q Reverse Recovery Charge 0.1 0.22 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73036 2 S-80272-Rev. B, 11-Feb-08