SUM110N05-06L Vishay Siliconix N-Channel 55-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ()I (A) Q (Typ) (BR)DSS DS(on) D g Available 175 C Junction Temperature 0.006 at V = 10 V 110 GS RoHS* 55 65 Low Thermal Resistance Package 0.0085 at V = 4.5 V 92 COMPLIANT GS APPLICATIONS Industrial D TO-263 G G D S Top View S Ordering Information: SUM110N05-06L SUM110N05-06L-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C Parameter Symbol Limit Unit V Drain-Source Voltage 55 DS V Gate-Source Voltage V 20 GS T = 25 C 110 C Continuous Drain Current (T = 175 C) I J D T = 125 C 63 C A I Pulsed Drain Current 240 DM Avalanche Current I 60 AR a L = 0.1 mH E Repetitive Avalanche Energy 180 mJ AR b T = 25 C C 158 Maximum Power Dissipation P W D c 3.7 T = 25 C A T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit c R Junction-to-Ambient 40 PCB Mount thJA C/W Junction-to-Case R 0.95 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1 square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72005 www.vishay.com S-80108-Rev. C, 21-Jan-08 1SUM110N05-06L Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 55 (BR)DSS DS D V V V = V , I = 250 A Gate-Threshold Voltage 13 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 55 V, V = 0 V 1 DS GS I V = 55 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 55 V, V = 0 V, T = 175 C 250 DS GS J a I V 5 V, V = 10 V 120 A On-State Drain Current D(on) DS GS V = 10 V, I = 30 A 0.0047 0.006 GS D V = 4.5 V, I = 20 A 0.0066 0.0085 GS D a r Drain-Source On-State Resistance DS(on) V = 10 V, I = 30 A, T = 125 C 0.0102 GS D J V = 10 V, I = 30 A, T = 175 C 0.0132 GS D J a g V = 15 V, I = 30 A 30 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3300 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 625 pF oss GS DS C Reverse Transfer Capacitance 310 rss c Q 65 100 Total Gate Charge g c Q V = 30 V, V = 10 V, I = 110 A Gate-Source Charge 15 nC gs DS GS D c Q 16 Gate-Drain Charge gd c t Turn-On Delay Time 15 25 d(on) c t V = 30 V, R = 0.27 15 25 Rise Time r DD L ns c I 110 A, V = 10 V, R = 2.5 t Turn-Off Delay Time D GEN g 35 55 d(off) c t 15 25 Fall Time f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current 110 S A I Pulsed Current 240 SM a V I = 110 A, V = 0 V Forward Voltage 1.0 1.5 V SD F GS t Reverse Recovery Time 70 125 ns rr Peak Reverse Recovery Charge I I = 110 A, di/dt = 100 A/s 2.5 5 A RM(REC) F Q Reverse Recovery Charge 0.09 0.31 C rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72005 2 S-80108-Rev. C, 21-Jan-08