STW75N60M6-4 Datasheet N-channel 600 V, 32 m typ., 72 A, MDmesh M6 Power MOSFET in a TO247-4 package Features V R max. I Order code DS DS(on) D STW75N60M6-4 600 V 36 m 72 A Reduced switching losses Lower R per area vs previous generation 4 DS(on) 3 2 Low gate input resistance 1 100% avalanche tested TO247-4 Zener-protected Drain(1, TAB) Excellent switching performance thanks to the extra driving source pin Applications Gate(4) Switching applications LLC converters Driver Boost PFC converters source (3) Power source (2) AM10177v2Z Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STW75N60M6-4 Product summary Order code STW75N60M6-4 Marking 75N60M6 Package TO247-4 Packing Tube DS12411 - Rev 2 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW75N60M6-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 72 A C I D Drain current (continuous) at T = 100 C 45 A C (1) I Drain current (pulsed) 288 A DM P Total power dissipation at T = 25 C 446 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 72 A, di/dt = 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.28 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 11 A AR Jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 1.4 J AS J D AR DD DS12411 - Rev 2 page 2/12