X-On Electronics has gained recognition as a prominent supplier of STW75N60M6-4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW75N60M6-4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW75N60M6-4 STMicroelectronics

STW75N60M6-4 electronic component of STMicroelectronics
STW75N60M6-4 STMicroelectronics
STW75N60M6-4 MOSFETs
STW75N60M6-4  Semiconductors

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Part No. STW75N60M6-4
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 600 V, 32 mO typ., 72 A MDmesh M6 Power MOSFET in TO247-4 package
Datasheet: STW75N60M6-4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 14.2261
10 : USD 12.559
25 : USD 12.0362
100 : USD 10.6036
600 : USD 9.4637
1200 : USD 9.4532
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Shipping Restricted
0
MOQ : 1
Multiples : 1
1 : USD 18.6303
2 : USD 12.6523
4 : USD 11.956
600 : USD 11.5163
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Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Product Type
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STW75N60M6-4 Datasheet N-channel 600 V, 32 m typ., 72 A, MDmesh M6 Power MOSFET in a TO247-4 package Features V R max. I Order code DS DS(on) D STW75N60M6-4 600 V 36 m 72 A Reduced switching losses Lower R per area vs previous generation 4 DS(on) 3 2 Low gate input resistance 1 100% avalanche tested TO247-4 Zener-protected Drain(1, TAB) Excellent switching performance thanks to the extra driving source pin Applications Gate(4) Switching applications LLC converters Driver Boost PFC converters source (3) Power source (2) AM10177v2Z Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STW75N60M6-4 Product summary Order code STW75N60M6-4 Marking 75N60M6 Package TO247-4 Packing Tube DS12411 - Rev 2 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW75N60M6-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 72 A C I D Drain current (continuous) at T = 100 C 45 A C (1) I Drain current (pulsed) 288 A DM P Total power dissipation at T = 25 C 446 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 72 A, di/dt = 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.28 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 11 A AR Jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 1.4 J AS J D AR DD DS12411 - Rev 2 page 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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