X-On Electronics has gained recognition as a prominent supplier of BSC027N06LS5ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSC027N06LS5ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSC027N06LS5ATMA1 Infineon

Name: BSC027N06LS5ATMA1
Brand: Infineon
SKU: BSC027N06LS5ATMA1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

BSC027N06LS5ATMA1 electronic component of Infineon

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See Product Specifications

Part No.	BSC027N06LS5ATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET DIFFERENTIATED MOSFETS
Datasheet:	BSC027N06LS5ATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.875 ea
Line Total: USD 2.88

Availability - 17831
Ship by Fri. 07 Mar to Tue. 11 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

BSC027N06LS5ATMA1 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

9

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 1
Multiples : 1

1 : USD 2.7134
10 : USD 1.9643
30 : USD 1.5629
100 : USD 1.3541
500 : USD 1.2601
1500 : USD 1.2207

17831

Ship by Fri. 07 Mar to Tue. 11 Mar

MOQ : 1
Multiples : 1

1 : USD 2.875
10 : USD 1.944
100 : USD 1.331
500 : USD 1.1
1000 : USD 1.0351
5000 : USD 1.034

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

100 A 100 A

Vds - Drain-Source Breakdown Voltage

60 V 60 V

Rds On - Drain-Source Resistance

2.3 mOhms 2.3 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1.1 V 1.1 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

83 W 83 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

TDSON - 8 TDSON - 8

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

30 nC 30 nC

Channel Mode

Enhancement Enhancement

Tradename

Optimos 5 Optimos 5

Configuration

Single Single

Series

Bsc027n Bsc027n

Transistor Type

1 N - Channel 1 N - Channel

Brand

Infineon Technologies Infineon Technologies

Forward Transconductance - Min

60 S 60 S

Fall Time

5.4 ns 5.4 ns

Product Type

Mosfet Mosfet

Rise Time

4.8 ns 4.8 ns

Factory Pack Quantity :

5000 5000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

25 ns 25 ns

Typical Turn-On Delay Time

7.7 ns 7.7 ns

Notes:- Show Stocked Products With Similar Attributes.

BSC027N06LS5ATMA1 Alternative Parts

We are delighted to provide the BSC027N06LS5ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSC027N06LS5ATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

BSC027N06LS5 MOSFET TM SuperSO8 OptiMOS Power-Transistor, 60 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 1) 4 Qualified according to JEDEC for target applications 1 3 2 2 Pb-free lead plating RoHS compliant 3 1 4 Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters S1 8D Parameter Value Unit S2 7D V 60 V DS R 2.7 m DS(on),max S3 6D I 134 A D G4 5D Q 43 nC oss Q G(0..4.5V) 24 nC Type / Ordering Code Package Marking Related Links BSC027N06LS5 PG-TDSON-8 027N06L - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.2, 2020-08-14TM OptiMOS Power-Transistor , 60 V BSC027N06LS5 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.2, 2020-08-14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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INF
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INFINEON TECHNOLOGIES AG
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INTERNATIONAL RECTIF
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Availability	Price	Buy Price	Quantity
9 Ship by Tue. 18 Mar to Fri. 21 Mar MOQ : 1 Multiples : 1	1 : USD 2.7134 10 : USD 1.9643 30 : USD 1.5629 100 : USD 1.3541 500 : USD 1.2601 1500 : USD 1.2207

17831 Ship by Fri. 07 Mar to Tue. 11 Mar MOQ : 1 Multiples : 1	1 : USD 2.875 10 : USD 1.944 100 : USD 1.331 500 : USD 1.1 1000 : USD 1.0351 5000 : USD 1.034

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