X-On Electronics has gained recognition as a prominent supplier of TN0110N3-G MOSFET across the USA, India, Europe, Australia, and various other global locations. TN0110N3-G MOSFET are a product manufactured by Microchip. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

TN0110N3-G Microchip

TN0110N3-G electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.TN0110N3-G
Manufacturer: Microchip
Category: MOSFET
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; 1W; TO92
Datasheet: TN0110N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.242 ea
Line Total: USD 1.24

Availability - 6591
Ship by Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1699
Ship by Mon. 22 Jul to Fri. 26 Jul
MOQ : 25
Multiples : 25
25 : USD 1.2875
250 : USD 1.1775
500 : USD 1.1638
1000 : USD 1.1588
3000 : USD 1.1525
5000 : USD 1.1475
8000 : USD 1.1413
15000 : USD 1.135

3152
Ship by Mon. 22 Jul to Fri. 26 Jul
MOQ : 1
Multiples : 1
1 : USD 1.3494
100 : USD 1.2234
500 : USD 1.2034

607
Ship by Mon. 22 Jul to Fri. 26 Jul
MOQ : 1
Multiples : 1
1 : USD 1.3527
100 : USD 1.226
500 : USD 1.2059

6591
Ship by Fri. 26 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 1.242
100 : USD 1.0626
500 : USD 0.9729

3152
Ship by Mon. 22 Jul to Fri. 26 Jul
MOQ : 11
Multiples : 1
11 : USD 1.3494
100 : USD 1.2234
500 : USD 1.2038

607
Ship by Mon. 22 Jul to Fri. 26 Jul
MOQ : 10
Multiples : 1
10 : USD 1.3527
100 : USD 1.226
500 : USD 1.2063

1697
Ship by Mon. 22 Jul to Fri. 26 Jul
MOQ : 50
Multiples : 25
50 : USD 1.7407
250 : USD 1.592
500 : USD 1.5734
1000 : USD 1.5666
3000 : USD 1.5582

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
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Subcategory
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Typical Turn-On Delay Time
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We are delighted to provide the TN0110N3-G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0110N3-G and other electronic components in the MOSFET category and beyond.

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TN0110N3-G is a MOSFET power transistor produced by Microchip. It is a n-channel enhancement-mode power MOSFET with an dual-N-channel logic level drive. It offers superior switching performance with an RDS(on) as low as 8mO. It also features a fast switching speed with an enhanced avalanche well design with EAS (Energy Absorption during Switching). It is designed for use in general purpose switching applications such as switching power supplies, personal computer power supplies, automotive power control, and more.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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