X-On Electronics has gained recognition as a prominent supplier of TN0110N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0110N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN0110N3-G Microchip

TN0110N3-G electronic component of Microchip
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See Product Specifications
Part No.TN0110N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; 1W; TO92
Datasheet: TN0110N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.188 ea
Line Total: USD 1.19 
Availability - 5480
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1941
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 25
Multiples : 25
25 : USD 1.325
250 : USD 1.1775
500 : USD 1.1637
1000 : USD 1.1525
3000 : USD 1.1412
5000 : USD 1.13
8000 : USD 1.1188
15000 : USD 1.1075

552
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6168
25 : USD 1.3411
100 : USD 1.2046

2947
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1103
25 : USD 1.0094
100 : USD 0.9521

5480
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.188
100 : USD 1.0164
500 : USD 0.9306

2947
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 11
Multiples : 1
11 : USD 1.1103
25 : USD 1.0094
100 : USD 0.9521

1940
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 50
Multiples : 25
50 : USD 1.6212
250 : USD 1.4407
500 : USD 1.4239
1000 : USD 1.4101

552
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 10
Multiples : 1
10 : USD 1.6168
25 : USD 1.3411
100 : USD 1.2046

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
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Forward Transconductance - Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN0110N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0110N3-G and other electronic components in the MOSFETs category and beyond.

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TN0110N3-G is a MOSFET power transistor produced by Microchip. It is a n-channel enhancement-mode power MOSFET with an dual-N-channel logic level drive. It offers superior switching performance with an RDS(on) as low as 8mO. It also features a fast switching speed with an enhanced avalanche well design with EAS (Energy Absorption during Switching). It is designed for use in general purpose switching applications such as switching power supplies, personal computer power supplies, automotive power control, and more.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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