X-On Electronics has gained recognition as a prominent supplier of TN0110N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0110N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN0110N3-G Microchip

Name: TN0110N3-G
Brand: Microchip
SKU: TN0110N3G_Microchip
Availability: InStock
Rating: 5 (11 reviews)

TN0110N3-G electronic component of Microchip

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See Product Specifications

Part No.	TN0110N3-G
Manufacturer:	Microchip
Category:	MOSFETs
Description:	Transistor: N-MOSFET; unipolar; 100V; 2A; 1W; TO92
Datasheet:	TN0110N3-G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.35 ea
Line Total: USD 1.35

Availability - 2113
Ship by Thu. 01 May to Mon. 05 May

MOQ: 1 Multiples: 1
Pack Size: 1

TN0110N3-G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1941

Ship by Mon. 05 May to Fri. 09 May

MOQ : 46
Multiples : 25

46 : USD 1.5632
250 : USD 1.2174
500 : USD 1.2032
1000 : USD 1.198
3000 : USD 1.1916
5000 : USD 1.1851
8000 : USD 1.1799
15000 : USD 1.1735

2113

Ship by Thu. 01 May to Mon. 05 May

MOQ : 1
Multiples : 1

1 : USD 1.35
25 : USD 1.0626
100 : USD 0.9306

Specifications

Manufacturer

Microchip Microchip

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

350 mA 350 mA

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

3 Ohms 3 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

600 mV 600 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1 W 1 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 92 TO - 92

Packaging

Bulk Bulk

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Brand

Microchip Microchip

Continuous Drain Current

350 mA 350 mA

Drain-Source Breakdown Voltage

100 V 100 V

Gate-Source Breakdown Voltage

+/- 20 V +/- 20 V

Power Dissipation

1 W 1 W

Rds On

3 Ohms 3 Ohms

Factory Pack Quantity :

1000 1000

Typical Turn-Off Delay Time

6 ns 6 ns

Height

5.33 mm 5.33 mm

Length

5.21 mm 5.21 mm

Transistor Type

1 N - Channel 1 N - Channel

Type

Fet Fet

Width

4.19 mm 4.19 mm

Forward Transconductance - Min

225 Ms 225 Ms

Cnhts

8541210000 8541210000

Fall Time

3 ns 3 ns

Hts Code

8541210095 8541210095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Rise Time

3 ns 3 ns

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-On Delay Time

2 ns 2 ns

Notes:- Show Stocked Products With Similar Attributes.

TN0110N3-G Alternative Parts

We are delighted to provide the TN0110N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0110N3-G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TN0110N3-G is a MOSFET power transistor produced by Microchip. It is a n-channel enhancement-mode power MOSFET with an dual-N-channel logic level drive. It offers superior switching performance with an RDS(on) as low as 8mO. It also features a fast switching speed with an enhanced avalanche well design with EAS (Energy Absorption during Switching). It is designed for use in general purpose switching applications such as switching power supplies, personal computer power supplies, automotive power control, and more.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1941 Ship by Mon. 05 May to Fri. 09 May MOQ : 46 Multiples : 25	46 : USD 1.5632 250 : USD 1.2174 500 : USD 1.2032 1000 : USD 1.198 3000 : USD 1.1916 5000 : USD 1.1851 8000 : USD 1.1799 15000 : USD 1.1735

2113 Ship by Thu. 01 May to Mon. 05 May MOQ : 1 Multiples : 1	1 : USD 1.35 25 : USD 1.0626 100 : USD 0.9306

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