X-On Electronics has gained recognition as a prominent supplier of TN0610N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0610N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN0610N3-G Microchip

TN0610N3-G electronic component of Microchip
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See Product Specifications
Part No.TN0610N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1W; TO92
Datasheet: TN0610N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.199 ea
Line Total: USD 1.2 
Availability - 555
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 25
25 : USD 1.3375
250 : USD 1.2138
500 : USD 1.2012
1000 : USD 1.1887
3000 : USD 1.1775
5000 : USD 1.165
8000 : USD 1.1537
15000 : USD 1.1425

2384
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6383
25 : USD 1.3493
100 : USD 1.2369

555
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.199
100 : USD 1.0263
500 : USD 0.9482

2384
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 11
Multiples : 1
11 : USD 1.6383
25 : USD 1.3493
100 : USD 1.2369

1940
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 25
50 : USD 1.8083
250 : USD 1.641
500 : USD 1.6241
1000 : USD 1.6072
3000 : USD 1.592

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN0610N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0610N3-G and other electronic components in the MOSFETs category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description 2V Maximum Low Threshold The TN0610 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure High Input Impedance and a well-proven silicon-gate manufacturing process. 100 pF Typical Low Input Capacitance This combination produces a device with the power Fast Switching Speeds handling capabilities of bipolar transistors and the high Low On-Resistance input impedance and positive temperature coefficient Free from Secondary Breakdown inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and Low Input and Output Leakage thermally induced secondary breakdown. Applications Microchips vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications Logic-Level Interfaces (Ideal for TTL and CMOS) where very low threshold voltage, high breakdown Solid-State Relays voltage, high input impedance, low input capacitance, Battery-Operated Systems and fast switching speeds are desired. Photovoltaic Drives Analog Switches General Purpose Line Drivers Telecommunication Switches Package Type 3-lead TO-92 (Top view) DRAIN SOURCE GATE See Table 3-1 for pin information. 2020 Microchip Technology Inc. DS20006418A-page 1TN0610 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Drain-to-Source Voltage ...................................................................................................................................... BV DSS Drain-to-Gate Voltage ......................................................................................................................................... BV DGS Gate-to-Source Voltage ......................................................................................................................................... 20V Operating Ambient Temperature, T ................................................................................................... 55C to +150C A Storage Temperature, T ..................................................................................................................... 55C to +150C S Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: T = 25C unless otherwise specified. All DC parameters are 100% tested at 25C unless A otherwise stated. (Pulse test: 300 s pulse, 2% duty cycle) Parameter Sym. Min. Typ. Max. Unit Conditions Drain-to-Source Breakdown Voltage BV 100 V V = 0V, I = 1 mA DSS GS D Gate Threshold Voltage V 0.6 2 V V = V , I = 1 mA GS(th) GS DS D V = V , I = 1 mA GS DS D Change in V with Temperature V 4.5 mV/C GS(th) GS(th) (Note 1) Gate Body Leakage Current I 100 nA V = 20V, V = 0V GSS GS DS V = 0V, V = Maximum GS DS 10 A rating Zero-Gate Voltage Drain Current I V = 0.8 Maximum rating, DSS DS 1 mA V = 0V, T = 125C GS A (Note 1) 1.2 2 A V = 5V, V = 25V GS DS On-State Drain Current I D(ON) 3 6.7 A V = 10V, V = 25V GS DS 15 V = 3V, I = 250 mA GS D Static Drain-to-Source On-State Resistance R 1.5 2 V = 5V, I = 750 mA DS(ON) GS D 1 1.5 V = 10V, I = 750 mA GS D V = 10V, I = 750 mA GS D Change in R with Temperature R 0.75 %/C DS(ON) DS(ON) (Note 1) Note 1: Specification is obtained by characterization and is not 100% tested. DS20006418A-page 2 2020 Microchip Technology Inc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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