X-On Electronics has gained recognition as a prominent supplier of TN0620N3-G-P014 MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0620N3-G-P014 MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN0620N3-G-P014 Microchip

TN0620N3-G-P014 electronic component of Microchip
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Part No.TN0620N3-G-P014
Manufacturer: Microchip
Category: MOSFETs
Description: Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
Datasheet: TN0620N3-G-P014 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 1.276 ea
Line Total: USD 2552 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 1.6319
4000 : USD 1.6172
6000 : USD 1.6024
10000 : USD 1.5875
12000 : USD 1.5727
20000 : USD 1.5578
30000 : USD 1.543
50000 : USD 1.528
100000 : USD 1.5131

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 1.276

   
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RoHS - XON
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Id - Continuous Drain Current
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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We are delighted to provide the TN0620N3-G-P014 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0620N3-G-P014 and other electronic components in the MOSFETs category and beyond.

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TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance (110pF typical) combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and the high input Low on-resistance impedance and positive temperature coefcient inherent Free from secondary breakdown in MOS devices. Characteristic of all MOS structures, this Low input and output leakage device is free from thermal runaway and thermally-induced secondary breakdown. Complementary N- and P-channel devices Supertexs vertical DMOS FETs are ideally suited to a Applications wide range of switching and amplifying applications where Logic level interfaces - ideal for TTL and CMOS very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching Solid state relays speeds are desired. Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information R I V Package Option DS(ON) D(ON) GS(th) BV /BV DSS DGS Device (max) (min) (max) (V) TO-92 () (A) (V) TN0620 TN0620N3-G 200 6.0 1.0 1.6 -G indicates package is RoHS compliant (Green) Pin Congurations Absolute Maximum Ratings DRAIN SOURCE Parameter Value Drain-to-source voltage BV DSS GATE Drain-to-gate voltage BV DGS TO-92 (N3) Gate-to-source voltage 20V O O Operating and storage temperature -55 C to +150 C Product Marking O Soldering temperature* 300 C T N Absolute Maximum Ratings are those values beyond which damage to the device YY = Year Sealed may occur. Functional operation under these conditions is not implied. Continuous 0 6 2 0 WW = Week Sealed operation of the device at the absolute rating level may affect device reliability. All Y Y W W = Green Packaging voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. TO-92 (N3) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTN0620 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 250 2.0 1.0 125 170 250 2.0 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 200 - - V V = 0V, I = 2.0mA DSS GS D V Gate threshold voltage 0.6 - 1.6 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -5.0 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - 1.0 mA V = 0V, T = 125C GS A 0.5 - - V = 5.0V, V = 25V GS DS I On-state drain current A D(ON) 1.0 - - V = 10V, V = 25V GS DS - 6.0 8.0 V = 5.0V, I = 250mA GS D R Static drain-to-source on-state resistance DS(ON) - 4.0 6.0 V = 10V, I = 500mA GS D O R Change in R with temperature - - 1.4 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 300 400 - mmho V = 25V, I = 500mA FS DS D C Input capacitance - 110 150 ISS V = 0V, GS C Common source output capacitance - 40 85 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 10 35 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 8.0 r I = 1.0A, ns D t Turn-off delay time - - 20 d(OFF) R = 25 GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = 0V, I = 1.0A SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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