X-On Electronics has gained recognition as a prominent supplier of TN0702N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0702N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN0702N3-G Microchip

TN0702N3-G electronic component of Microchip
TN0702N3-G Microchip
TN0702N3-G MOSFETs
TN0702N3-G  Semiconductors

Images are for reference only
See Product Specifications
Part No. TN0702N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 20V; 0.5A; 1W; TO92
Datasheet: TN0702N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
58: USD 1.2124 ea
Line Total: USD 70.32 
Availability - 1091
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 58  Multiples: 25
Pack Size: 25
Availability Price Quantity
1091
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 58
Multiples : 25
58 : USD 1.2124
250 : USD 0.9938
500 : USD 0.9787
1000 : USD 0.9412
3000 : USD 0.895
5000 : USD 0.8813

53
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 55
Multiples : 1
55 : USD 0.9569

219
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.834
5 : USD 1.638
13 : USD 1.386
35 : USD 1.302
100 : USD 1.26

219
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 55
Multiples : 1
55 : USD 1.5044
100 : USD 1.4523

53
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 55
Multiples : 1
55 : USD 0.9569

688
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 66
Multiples : 1
66 : USD 0.9783
67 : USD 0.9767
100 : USD 0.975
200 : USD 0.962
500 : USD 0.9219

85
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 81
Multiples : 1
81 : USD 1.618

1091
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 75
Multiples : 25
75 : USD 1.4635
250 : USD 1.3435
500 : USD 1.2724
1000 : USD 1.2236
3000 : USD 1.1635

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN0702N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0702N3-G and other electronic components in the MOSFETs category and beyond.

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Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off) Low threshold - 1.6V max. transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance - 130pF typical combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and the high input impedance Low on-resistance guaranteed at V = 2, 3, and 5V GS and positive temperature coefficient inherent in MOS devices. Free from secondary breakdown Characteristic of all MOS structures, this device is free Low input and output leakage from thermal runaway and thermally-induced secondary breakdown. Applications Logic level interfaces ideal for TTL and CMOS Supertexs vertical DMOS FETs are ideally suited to a wide Solid state relays range of switching and amplifying applications where very Battery operated systems low threshold voltage, high breakdown voltage, high input Photo voltaic drives impedance, low input capacitance, and fast switching speeds Analog switches are desired. General purpose line drivers Telecom switches Ordering Information Product Summary Part Number Package Option Packing R I V DS(ON) D(ON) GS(th) BV /BV DSS DGS (max) (max) (min) TN0702N3-G TO-92 1000/Bag 20V 1.3 0.5A 1.0V TN0702N3-G P002 TN0702N3-G P003 Pin Configuration TN0702N3-G P005 TO-92 2000/Reel TN0702N3-G P013 TN0702N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. DRAIN Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. SOURCE Absolute Maximum Ratings GATE Parameter Value TO-92 Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V O O Operating and storage temperature -55 C to +150 C SiTN YY = Year Sealed 0 702 Absolute Maximum Ratings are those values beyond which damage to the device WW = Week Sealed may occur. Functional operation under these conditions is not implied. Continuous YYWW = Green Packaging operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package may or may not include the following marks: Si or TO-92 Typical Thermal Resistance Package ja O TO-92 132 C/W Doc. DSFP-TN0702 Supertex inc. C080813 www.supertex.comTN0702 Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM (continuous) (pulsed) T = 25 C C TO-92 530mA 1.0A 1.0W 530mA 1.0A Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 20 - - V V = 0V, I = 1.0mA DSS GS D V Gate threshold voltage 0.5 0.8 1.0 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -4.0 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 100 nA V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - 100 A V = 0V, T = 125C GS A I On-state drain current 0.5 1.0 - A V = V = 5.0V D(ON) GS DS - 4.0 5.0 V = 2.0V, I = 50mA GS D R Static drain-to-source on-state resistance - 1.9 2.5 V = 3.0V, I = 200mA DS(ON) GS D - 1.0 1.3 V = 5.0V, I = 500mA GS D O R Change in R with temperature - - 0.75 %/ C V = 5.0V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 100 500 - mmho V = 5.0V, I = 500mA FS DS D C Input capacitance - 130 200 ISS V = 0V, GS C Common source output capacitance - 70 125 pF V = 20V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 30 60 RSS t Turn-on delay time - - 20 d(ON) V = 20V, DD t Rise time - - 20 r ns I = 0.5A, D t Turn-off delay time - - 30 d(OFF) R = 25 GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.0 V V = 0V, I = 0.5A SD GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% INPUT Pulse R L 10% Generator 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(OFF) f d(ON) r VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Doc. DSFP-TN0702 Supertex inc. C080813 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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