X-On Electronics has gained recognition as a prominent supplier of IPB033N10N5LFATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB033N10N5LFATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB033N10N5LFATMA1 Infineon

Name: IPB033N10N5LFATMA1
Brand: Infineon
SKU: IPB033N10N5LFATMA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IPB033N10N5LFATMA1 electronic component of Infineon

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Part No.	IPB033N10N5LFATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET DIFFERENTIATED MOSFETS
Datasheet:	IPB033N10N5LFATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.9677 ea
Line Total: USD 6.97

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IPB033N10N5LFATMA1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 1 Multiples : 1	1 : USD 6.9677 10 : USD 6.7218 30 : USD 6.2952 100 : USD 5.9229

0 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 9.8493 10 : USD 6.4416 100 : USD 5.2704 500 : USD 4.507 1000 : USD 4.4966

We are delighted to provide the IPB033N10N5LFATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB033N10N5LFATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

IPB033N10N5LF MOSFET TM DPAK OptiMOS 5 Linear FET , 100 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Pin 2, Tab Parameter Value Unit V 100 V DS Gate Pin 1 RDS(on),max 3.3 m Source Pin 3 I (silicon limited) 170 A D I (package limited) 120 A D I (V =56 V, t =10 pulse DS p 7 A ms) Type / Ordering Code Package Marking Related Links IPB033N10N5LF PG-TO 263-3 033N10LF - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.1, 2017-02-16TM OptiMOS 5 Linear FET , 100 V IPB033N10N5LF Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.1, 2017-02-16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
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CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
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SP9
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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 120 A 120 A
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Rds On - Drain-Source Resistance 2.7 mOhms 2.7 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 179 W 179 W
Mounting Style Smd/Smt Smd/Smt
Package / Case D2PAK - 3 D2PAK - 3
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 102 nC 102 nC
Channel Mode Enhancement Enhancement
Tradename Optimos Optimos
Configuration Single Single
Series Optimos 5 Optimos 5
Transistor Type 1 N - Channel 1 N - Channel
Brand Infineon Technologies Infineon Technologies
Forward Transconductance - Min 23 S 23 S
Fall Time 48 ns 48 ns
Product Type Mosfet Mosfet
Rise Time 32 ns 32 ns
Factory Pack Quantity : 1000 1000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 64 ns 64 ns
Typical Turn-On Delay Time 8 ns 8 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Taric 8541290000 8541290000