TSM60N900 600V, 4.5A, 0.9 N-Channel Power MOSFET Pin Definition: ITO-220 TO-251 Key Parameter Performance 1. Gate (IPAK) 2. Drain Parameter Value Unit 3. Source V 600 V DS R (max) 0.9 DS(on) Q g 9.7 nC TO-252 (DPAK) Block Diagram Features Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Application Power Supply. Lighting Ordering Information Part No. Package Packing N-Channel MOSFET TSM60N900CI C0G ITO-220 50pcs / Tube TSM60N900CH C5G TO-251 75pcs / Tube TSM60N900CP ROG TO-252 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (T = 25C unless otherwise noted) C Limit Parameter Symbol Unit ITO-220 IPAK/DPAK Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS (Note 1) Continuous Drain Current T = 25C I 4.5 A C D (Note 2) Pulsed Drain Current I 13.5 A DM Total Power Dissipation T = 25C P 20 50 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 81 mJ AS (Note 3) Single Pulsed Avalanche Current I 1.8 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG 1/9 Version: B14 TSM60N900 600V, 4.5A, 0.9 N-Channel Power MOSFET Thermal Performance Limit Parameter Symbol Unit ITO-220 IPAK/DPAK Junction to Case Thermal Resistance R 6.25 2.5 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 600 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 3 4 DS GS D GS(TH) V Gate Body Leakage V = 30V, V = 0V I -- -- 100 GS DS GSS nA Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 1 DS GS DSS A V = 10V, I = 2.3A -- 0.72 0.9 Drain-Source On-State Resistance R GS D DS(ON) (Note 5) Dynamic Total Gate Charge Q -- 9.7 -- g V = 380V, I = 2.3A, DS D Gate-Source Charge Q -- 2.3 -- nC gs V = 10V GS Gate-Drain Charge Q -- 3.6 -- gd Input Capacitance C -- 480 -- V = 100V, V = 0V, iss DS GS pF Output Capacitance f = 1.0MHz C -- 36 -- oss Gate Resistance f=1MHz, open drain R -- 3.4 -- g (Note 6) Switching Turn-On Delay Time t -- 12 -- d(on) V = 380V, DD Turn-On Rise Time t -- 16 -- r R = 4.7, ns GEN Turn-Off Delay Time t -- 22 -- d(off) I = 2.3A, V = 10V, D GS Turn-Off Fall Time t -- 12 -- f (Note 4) Source-Drain Diode Forward On Voltage -- -- 1.4 V I =4.5A, V =0V V S GS SD Reverse Recovery Time -- 179 -- ns t rr V =200V, I =2.3A R S Reverse Recovery Charge -- 1.2 -- C dI /dt=100A/s Q F rr Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L=50mH, I =1.8A, V =50V, R =25, Starting T = 25C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2/9 Version: B14