VUM 25-05E V = 500 V Rectifier Module DSS I =35A for Three Phase Power Factor Correction D25 R = 0.12 1 DS(on) Using fast recovery epitaxial diodes and MOSFET 5 3 6 2 1 9 V V Type RRM (Diode) DSS 5 2 10 VV 600 500 VUM 25-05E 10 9 6 3 Symbol Conditions Maximum Ratings Features Package with DCB ceramic base plate V T = 25C to 150C 500 V DSS VJ Soldering connections for PCB V T = 25C to 150C R = 10 k 500 V DGR VJ GS mounting V Continuous 20 V GS Isolation voltage 3600 V~ TM Low R HDMOS process DS(on) I T = 85C 24 A D S Low package inductance for high I T = 25C 35 A D S speed switching I T = 25C, t = 95 A DM S p Ultrafast diodes Kelvin source for easy drive P T = 85C 170 W D S I V = 0 V, T = 25C 24 A Applications S GS S I V = 0 V, T = 25C, t = 95 A SM GS S p Three phase input rectifier with power factor correction consisting of three V 600 V RRM modules VUM 25-05 I T = 85C, rectangular = 0.5 40 A dAV S For power supplies, UPS, SMPS, drives, welding etc. I T = 45C, t = 10 ms (50 Hz) 300 A FSM VJ t = 8.3 ms (60 Hz) 320 A Advantages T = 150C, t = 10 ms (50 Hz) 260 A VJ t = 8.3 ms (60 Hz) 280 A Reduced harmonic content of input currents corresponding to standards P T = 85C 36 W Rectifier generates maximum DC S power with a given AC fuse T -40...+150 C Wide input voltage range VJ T 150 C JM No external isolation T -40...+150 C Easy to mount with two screws stg Suitable for wave soldering V 50/60 Hz t = 1 min 3000 V~ High temperature and power cycling ISOL I < 1 mA t = 1 s 3600 V~ capability ISOL M Mounting torque (M5) 2-2.5/18-22 Nm/lb.in. d Weight 35 g Pulse width limited by T VJ IXYS reserves the right to change limits, test conditions and dimensions. 2007 IXYS All rights reserved 1 - 4 Module Diodes MOSFET 20070222VUM 25-05E Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. V V = 0 V, I = 2 mA 500 V DSS GS D V V = 20 V, I = 20 mA 2 5 V GS(th) DS D I V = 20 V, V = 0 V 500 nA GSS GS DS I V = 500 V, V = 0 V 2 mA DSS DS GS R T = 25C 0.12 DS(on) VJ R T = 25C 1.5 Gint VJ g V = 15 V, I = 12 A 30 S fs DS DS V I = 24 A, V = 0 V 1.5 V DS DS GS t 100 ns V = 250 V, I = 12 A, V = 10 V d(on) DS DS GS t 220 ns Zgen. = 1 , L-load d(off) C 8.5 nF iss C V = 25 V, f = 1 MHz, V = 0 V 0.9 nF oss DS GS C 0.3 nF rss Q V = 250 V, I = 12 A, V = 10 V 350 nC g DS D GS R with heat transfer paste 0.38 K/W thJH V I = 22 A, T = 25C 1.65 V F F VJ T =150C 1.4 V VJ I V = 600 V, T = 25C 1.5 mA R R VJ V = 480 V, T = 25C 0.25 mA R VJ T =125C 7 mA VJ V For power-loss calculations only 1.14 V T0 r T = 125C 10 m T VJ I I = 30 A, -di /dt = 240 A/s RM F F V = 350 V, T = 100C 10 11 A R VJ R with heat transfer paste 1.8 K/W thJH Dimensions in mm (1 mm = 0.0394 ) IXYS reserves the right to change limits, test conditions and dimensions. 2007 IXYS All rights reserved 2 - 4 Diodes MOSFET 20070222