TSM10N80 Taiwan Semiconductor N-Channel Power MOSFET 800V, 9.5A, 1.05 FEATURES KEY PERFORMANCE PARAMETERS Low R 1.05 (Max.) PARAMETER VALUE UNIT DS(ON) Low gate charge typical 53nC (Typ.) V 800 V DS Improve dV/dt capability R(max) 1.05 DS(on) Pb-free plating Q 53 nC g Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition APPLICATION Power Supply Lighting TO-220 ITO-220 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL TO-220 ITO-220 UNIT Drain-Source Voltage V 800 V DS Gate-Source Voltage V 30 V GS T = 25C 9.5 C (Note 1) Continuous Drain Current I A D T = 100C 5.7 C (Note 2) Pulsed Drain Current I 38 A DM Total Power Dissipation T = 25C P 290 48 W C DTOT Single Pulsed Avalanche Energy E 267 mJ AS Single Pulsed Avalanche Current I 10 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL TO-220 ITO-220 UNIT Junction to Case Thermal Resistance R 0.43 2.6 C/W JC Junction to Ambient Thermal Resistance R 62.5 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. JA Document Number: DS P0000022 1 Version: D15 Not RecommendedTSM10N80 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 800 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2.0 -- 4.0 DS GS D GS(TH) V Gate Body Leakage V = 30, V = 0V I -- -- 100 GS DS GSS nA Zero Gate Voltage Drain Current V = 800V, V = 0V I -- -- 10 A DS GS DSS V = 10V, I = 4.75A -- 0.9 1.05 Drain-Source On-State Resistance GS D R DS(on) V = 30V, I = 4.75A -- 6.3 -- Forward Transconductance DS D g S fs (Note 4) Dynamic Total Gate Charge Q -- -- g 53 V = 640V, I =9.5A, DS D Gate-Source Charge Q -- -- 10 gs nC V = 10V GS Gate-Drain Charge Q -- -- 23 gd Input Capacitance C -- -- 2336 iss V = 25V, V = 0V, DS GS Output Capacitance C -- -- oss 214 pF f = 1.0MHz Reverse Transfer Capacitance C 29 rss (Note 5) Switching Turn-On Delay Time -- -- t 63 d(on) Turn-On Rise Time t -- -- 62 V = 400V, V = 10V r DS GS ns Turn-Off Delay Time R = 25, I = 9.5A t -- -- 256 G D d(off) Turn-Off Fall Time t -- -- f 72 (Note 3) Source-Drain Diode Forward On Voltage -- -- 1.5 V I = 9.5A, V = 0V V S GS SD Reverse Recovery Time 450 t -- -- ns rr I = 9.5A, V = 0V S GS Reverse Recovery Charge -- 5.3 -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. o 3. L = 5mH, I = 10A, V = 50V, R = 25, Starting T = 25 C AS DD G J 100% Eas Test Condition: L = 5mH, I = 5A, V = 50V, R = 25, Starting T = 25C AS DD G J 4. Pulse test: PW 300s, duty cycle 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS P0000022 2 Version: D15 Not Recommended