StrongIRFET IRFR7740PbF IRFU7740PbF HEXFET Power MOSFET Application Brushed motor drive applications D V 75V BLDC motor drive applications DSS Battery powered circuits R typ. 6.0m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.2m Resonant mode power supplies OR-ing and redundant power switches I 87A S D DC/DC and AC/DC converters DC/AC inverters D Benefits S S D Improved gate, avalanche and dynamic dV/dt ruggedness G G Fully characterized capacitance and avalanche SOA I-Pak Enhanced body diode dV/dt and dI/dt capability D-Pak IRFU7740PbF IRFR7740PbF Lead-free, RoHS compliant G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 IRFR7740PbF IRFR7740PbF D-Pak Tape and Reel 2000 IRFR7740TRPbF IRFU7740PbF I-Pak Tube 75 IRFU7740PbF 20 100 I = 52A D 80 15 60 10 T = 125C J 40 5 20 T = 25C J 0 0 0 5 10 15 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFR/U7740PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 87 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 62 A D C GS I Pulsed Drain Current 330 DM P T = 25C Maximum Power Dissipation 140 W D C Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Symbol Max. Units Parameter E Single Pulse Avalanche Energy 160 mJ AS (Thermally limited) E Single Pulse Avalanche Energy 242 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 1.05 JC R Junction-to-Ambient (PCB Mount) C/W 50 JA R Junction-to-Ambient 110 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 51 mV/C Reference to 25C, I = 1mA V /T (BR)DSS J D 6.0 7.2 V = 10V, I = 52A R Static Drain-to-Source On-Resistance m DS(on) GS D 7.0 V = 6.0V, I = 26A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D 1.0 V =75 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =75V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.2 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 120H, R = 50, I = 52A, V =10V. Jmax J G AS GS I 52A, di/dt 570A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: