DMT6005LSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I Max High Conversion Efficiency
D
BV R Max
DSS DS(ON)
T = 25C Low R Minimizes On-State Losses
A DS(ON)
Low Input Capacitance
6m @ V = 10V 13.5A
GS
60V
Fast Switching Speed
8.9m @ V = 4.5V 11.3A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
Case: SO-8
(R ), yet maintain superior switching performance, making it
DS(ON)
Case Material: Molded Plastic,Gree Molding Compound.
ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
High Frequency Switching
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Synchronous Rectification
Solderable per MIL-STD-202, Method 208
DC-DC Converters
Weight: 0.074 grams (Approximate)
D
S D
SO-8
S D
G
S D
G
D
S
Top View Equivalent circuit
Top View Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMT6005LSS-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT6005LSS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady
T = +25C 13.5
A
I A
D
State
10.8
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 18.1
A
t<10s A
I
D
14.4
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) I 3 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A
DM
14.8
Avalanche Current, L = 1mH I A
AS
98
Avalanche Energy, L = 1mH E mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 1.3 W
D
Steady State 93 C/W
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
t<10s 53 C/W
Total Power Dissipation (Note 6) 1.7 W
P
D
Steady State 73 C/W
Thermal Resistance, Junction to Ambient (Note 6) R
JA
t<10s 41 C/W
Thermal Resistance, Junction to Case (Note 6) 12.7 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 1 3 V V = V , I = 250A
GS(TH) DS GS D
5 6 V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance R 5.7 7.2 m V = 6V, I = 20A
DS(ON) GS D
6.7 8.9 V = 4.5V, I = 12.5A
GS D
Diode Forward Voltage V
V 0.9 1.2 V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 2962
C
iss
V = 30V, V = 0V,
DS GS
Output Capacitance 965 pF
C
oss
f = 1MHz
Reverse Transfer Capacitance 60
C
rss
Gate Resistance 0.66
R V = 0V, V = 0V, f = 1MHz
g DS GS
47.1
Total Gate Charge (V = 10V) Q
GS g
Total Gate Charge (V = 4.5V) Q 23.1
GS g
nC
VDD = 30V, ID = 20A
10.2
Gate-Source Charge Q
gs
Gate-Drain Charge Q 12.5
gd
8.3
Turn-On Delay Time t
D(ON)
Turn-On Rise Time t 9.4
R V = 30V, V = 10V,
DD GS
nS
22
Turn-Off Delay Time I = 20A, R = 3.3
t D g
D(OFF)
Turn-Off Fall Time 8.9
t
F
Body Diode Reverse Recovery Time nS
t 40.4
RR
I = 20A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge nC
Q 49.7
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMT6005LSS May 2016
Diodes Incorporated
www.diodes.com
Document number: DS38291 Rev. 2 - 2