SUP25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET c V (V) R ( ) Max. Q (Typ.) I (A) DS DS(on) g D 100 % R and UIS Tested g 0.138 at V = - 10 V - 16.3 GS Material categorization: 0.141 at V = - 7.5 V For definitions of compliance please see - 100 - 16.1 24 nC GS www.vishay.com/doc 99912 0.142 at V = - 6 V - 16.1 GS APPLICATIONS TO-220AB DC/DC Converters S Motor Control G Drain connected to Tab GD S D Top View P-Channel MOSFET Ordering Information: SUP25P10-138-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage V - 100 DS V Gate-Source Voltage V 20 GS T = 25 C - 16.3 C Continuous Drain Current (T = 150 C) I J D T = 125 C - 7.3 C A Pulsed Drain Current (t = 100 s) I - 40 DM Avalanche Current I - 25 AS L = 0.1 mH a Single Pulse Avalanche Energy E 31.25 mJ AS b T = 25 C 73.5 C Power Dissipation P W D T = 25 C 3.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit 40 Junction-to-Ambient Free Air R thJA C/W Junction-to-Case R 1.7 thJC Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. T = 25 C C Document Number: 62885 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-2074-Rev. A, 30-Sep-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUP25P10-138 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 100 DS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 2 - 4 GS(th) DS GS D V Temperature Coefficient V /T I = - 250 A - 105 DS DS J D mV/C V Temperature Coefficient V /T I = - 250 A 6.6 GS(th) GS(th) J D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 100 V, V = 0 V - 1 DS GS I V = - 100 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current - 50 A DSS DS GS J V = - 100 V, V = 0 V, T = 150 C - 200 DS GS J a I V = - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 6 A 0.115 0.138 GS D a R V = - 7.5 V, I = - 6 A 0.117 0.141 Drain-Source On-State Resistance DS(on) GS D V = - 6 V, I = - 6 A 0.118 0.142 GS D a g V = - 15 V, I = - 6 A 18 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2110 iss C V = 0 V, V = - 50 V, f = 1 MHz Output Capacitance 105 pF oss GS DS C Reverse Transfer Capacitance 58 rss V = - 50 V, V = - 10 V, I = - 6.7 A 40 60 DS GS D c Q Total Gate Charge g 24 36 nC c Q V = - 50 V, V = - 6 V, I = - 6.7 A 12.5 Gate-Source Charge gs DS GS D c Q 6.7 Gate-Drain Charge gd R Gate Resistance f = 1 MHz 2 8 16 g c t 714 Turn-On Delay Time d(on) c t V = - 50 V, R = 10 12 20 Rise Time r DD L c I - 5 A, V = - 10 V, R = 1 t D GEN g 46 70 Turn-Off Delay Time d(off) c t 40 60 Fall Time f ns c t 12 20 Turn-On Delay Time d(on) c t 105 160 Rise Time V = - 50 V, R = 10 r DD L c I - 5 A, V = - 4.5 V, R = 1 t D GEN g 36 54 Turn-Off Delay Time d(off) c t 34 51 Fall Time f b Source-Drain Diode Ratings and Characteristics T = 25 C C I Continuous Current - 16.3 S A Pulsed Current (t = 100 s) I - 40 SM a V I = - 5 A, V = 0 V - 0.85 - 1.5 V Forward Voltage SD F GS t Reverse Recovery Time 70 105 ns rr I I = - 5 A, dI/dt = 100 A/s Peak Reverse Recovery Current - 7 - 14 A RM(REC) F Q Reverse Recovery Charge 220 330 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62885 2 S13-2074-Rev. A, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000