RQ1A070ZP Datasheet Pch -12V -7A Middle Power MOSFET llOutline TSMT8 V -12V DSS R (Max.) 12m DS(on) I 7A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance. 2) Low voltage drive(1.5V). 3) High power package. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking YJ llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS I Continuous drain current 7 A D *1 I Pulsed drain current 28 A D,pulse V Gate - Source voltage 10 V GSS *2 P 1.5 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RQ1A070ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current I V = 10V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -7A - 8 12 GS D V = -2.5V, I = -3.5A - 11 16 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -3.5A - 15 23 GS D V = -1.5V, I = -1.4A - 19 38 GS D Forward Transfer *4 Y V = -6V, I = -7A 12 - - S fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4(20200.8mm) *4 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.