X-On Electronics has gained recognition as a prominent supplier of RQ1E070RPTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ1E070RPTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ1E070RPTR ROHM

RQ1E070RPTR electronic component of ROHM
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See Product Specifications
Part No.RQ1E070RPTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET MID PWR MOSFET SER
Datasheet: RQ1E070RPTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
29: USD 1.4023 ea
Line Total: USD 40.67 
Availability - 11385
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 29  Multiples: 1
Pack Size: 1
Availability Price Quantity
5513
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.173
10 : USD 0.8947
100 : USD 0.6958
500 : USD 0.5888
1000 : USD 0.5428
3000 : USD 0.521
6000 : USD 0.5198

11385
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 29
Multiples : 1
29 : USD 1.4023
50 : USD 1.2237
100 : USD 1.1457
200 : USD 1.0904
500 : USD 0.8597
1000 : USD 0.3997
3000 : USD 0.3982

5820
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 145
Multiples : 1
145 : USD 1.0702
300 : USD 0.93
500 : USD 0.7013
1000 : USD 0.6473
3000 : USD 0.578
6000 : USD 0.5765

1086
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 145
Multiples : 1
145 : USD 1.0702
300 : USD 0.93

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ1E070RPTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ1E070RPTR and other electronic components in the MOSFETs category and beyond.

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RQ1E070RP Datasheet Pch -30V -7A Small Signal MOSFET llOutline V -30V DSS R (Max.) 17m DS(on) TSMT8 I 7A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TR Marking UE llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -30 V DSS I Continuous drain current 7 A D *1 I Pulsed drain current 28 A DP V Gate - Source voltage 20 V GSS *2 P 1.5 W D Power dissipation *3 P 1.1 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180910 - Rev.002 RQ1E070RP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 /W thJA Thermal resistance, junction - ambient *3 R - - 113 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -7.0A - 12 17 GS D Static drain - source *4 R V = -4.5V, I = -3.5A - 17 24 m DS(on) GS D on - state resistance V = -4.0V, I = -3.5A - 19 27 GS D R Gate resistance f = 1MHz, open drain - 5.2 - G Forward Transfer *4 Y V = -10V, I = -7A 6 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180910 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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