X-On Electronics has gained recognition as a prominent supplier of RQ1C075UNTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ1C075UNTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ1C075UNTR ROHM

RQ1C075UNTR electronic component of ROHM
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Part No.RQ1C075UNTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ1C075UNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8547 ea
Line Total: USD 0.85 
Availability - 1887
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2175
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4923
10 : USD 0.4409
30 : USD 0.4142
100 : USD 0.3893
500 : USD 0.3742
1000 : USD 0.3645

1887
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8547
10 : USD 0.6204
100 : USD 0.4213
500 : USD 0.3421
1000 : USD 0.3102
3000 : USD 0.2739
6000 : USD 0.264
9000 : USD 0.253
24000 : USD 0.2519

161
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 65
Multiples : 1
65 : USD 0.6305
100 : USD 0.4583

1857
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 174
Multiples : 1
174 : USD 0.6135
250 : USD 0.5889
500 : USD 0.5676
1000 : USD 0.5491

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ1C075UNTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ1C075UNTR and other electronic components in the MOSFETs category and beyond.

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RQ1C075UN Datasheet Nch 20V 7.5A Small Signal MOSFET llOutline V 20V DSS TSMT8 R (Max.) 16m DS(on) I 7.5A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking XH llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 20 V DSS I Continuous drain current 7.5 A D *1 I Pulsed drain current 30 A DP V Gate - Source voltage 10 V GSS *2 P 1.5 W D Power dissipation *3 P 1.1 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 2018 ROHM Co., Ltd. All rights reserved. 20180725 - Rev.002 RQ1C075UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 /W thJA Thermal resistance, junction - ambient *3 R - - 113 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 7.5A - 11 16 GS D V = 2.5V, I = 7.5A - 14 20 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 3.7A - 17 24 GS D V = 1.5V, I = 1.5A - 20 40 GS D R Gate resistance f = 1MHz, open drain - 5 - G Forward Transfer *4 Y V = 10V, I = 7.5A 7 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2/11 20180725 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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