X-On Electronics has gained recognition as a prominent supplier of RQ1C065UNTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ1C065UNTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ1C065UNTR ROHM

RQ1C065UNTR electronic component of ROHM
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See Product Specifications
Part No.RQ1C065UNTR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: RQ1C065UNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7291 ea
Line Total: USD 0.73 
Availability - 475
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
475
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7291
10 : USD 0.5543
100 : USD 0.3772
500 : USD 0.299
1000 : USD 0.2657
3000 : USD 0.2105

5562
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 57
Multiples : 1
57 : USD 0.7215
100 : USD 0.5737
500 : USD 0.481
1000 : USD 0.3559
3000 : USD 0.3364

776
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 166
Multiples : 1
166 : USD 0.9173

2900
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 166
Multiples : 1
166 : USD 0.641
250 : USD 0.6154
500 : USD 0.5932
1000 : USD 0.5738
2500 : USD 0.5569

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Height
Length
Product
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ1C065UNTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ1C065UNTR and other electronic components in the MOSFETs category and beyond.

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RQ1C065UN Datasheet Nch 20V 6.5A Middle Power MOSFET llOutline TSMT8 V 20V DSS R (Max.) 22m DS(on) I 6.5A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance. 2) 1.5V Drive 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking VB llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 20 V DSS I Continuous drain current 6.5 A D *1 I Pulsed drain current 26 A D,pulse V Gate - Source voltage 10 V GSS *2 P 1.5 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RQ1C065UN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.3 - 1.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 6.5A - 16 22 GS D V = 2.5V, I = 6.5A - 19 27 GS D Static drain - source *4 R m DS(on) on - state resistance V = 1.8V, I = 3.2A - 24 32 GS D V = 1.5V, I = 1.3A - 29 58 GS D R Gate input resistance f = 1MHz, open drain - 2 - G Forward Transfer *4 Y V = 10V, I = 6.5A 6 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (20200.8mm) *4 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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