V 1.7 kV CAS300M17BM2 DS 1.7kV, 8.0 m All-Silicon Carbide E 23 mJ sw, Total 300A, 150 C Half-Bridge Module R 8.0 m DS(on) TM C2M MOSFET and Z-Rec Diode Features Package 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications Part Number Package Marking HF Resonant Converters/Inverters Solar and Wind Inverters CAS300M17BM2 Half-Bridge Module CAS300M17BM2 UPS and SMPS Motor Drive Traction Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Notes V Drain - Source Voltage 1.7 kV DSmax V Gate - Source Voltage -10/+25 V Absolute maximum values GSmax V Gate - Source Voltage -5/20 V Recommended operational values GSop 325 V = 20 V, T = 25 C GS C I Continuous MOSFET Drain Current A Fig. 26 D 225 V = 20 V, T = 90 C GS C I Pulsed Drain Current 900 A Pulse width tp limited by T D(pulse) J(max) 556 V = -5 V, T = 25 C GS C I Continuous Diode Forward Current A F 353 V = -5 V, T = 90 C GS C T Junction Temperature -40 to +150 C Jmax T ,T Case and Storage Temperature Range -40 to +125 C C STG V Case Isolation Voltage 5.0 kV AC, 50 Hz , 1 min isol L Stray Inductance 15 nH Measured between terminals 2 and 3 Stray P Power Dissipation 1760 W T C = 25 C, TJ = 150 C Fig. 25 D Subject to change without notice. 1 www.cree.com Datasheet: CAS300M17BM2,Rev. AElectrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain - Source Blocking Voltage 1.7 kV V = 0, I = 2 mA DSS GS, D V Gate Threshold Voltage 1.8 2.5 V V = V I = 15 mA Fig. 7 GS(th) D G, D 700 2000 A V = 1.7 kV, V = 0 DS GS I Zero Gate Voltage Drain Current DSS 1500 4000 A V = 1.7 kV,V = 0, T = 150 C DS GS J I Gate-Source Leakage Current 1 600 nA V = 25 V, V = 0 GSS DS GS 8.0 10 V = 20 V, I = 300 A GS DS Fig. 4, R On State Resistance m DS(on) 5, 6 16.2 20 V = 20V, I = 300 A,T = 150 C GS DS J = 20 V I = 300 A 133 VDS , DS g fs Transconductance S Fig. 8 131 VDS = 20 V, ID = 300 A, TJ = 150 C C iss Input Capacitance 20 f = 200 kHz, VDS = 1 kV, Fig. C oss Output Capacitance 2.5 nF V = 25 mV 16, 17 AC C Reverse Transfer Capacitance 0.08 rss V = 900 V, V = -5V/+20V E DD GS on Turn-On Switching Energy 13.0 mJ I = 300 A, R = 2.5 D G(ext) Fig. 22 Load = 77 H, TJ = 150 C E Turn-Off Switching Energy Off 10.0 mJ Note: IEC 60747-8-4 Definitions R Internal Gate Resistance 3.7 f = 1 MHz, V = 25 mV AC G (int) Q Gate-Source Charge 273 GS V = 900 V, V = -5V/+20V, DD GS Q Gate-Drain Charge 324 nC Fig. 15 GD I = 300 A, Per JEDEC24 pg 27 D QG Total Gate Charge 1076 t Turn-on delay time 105 ns V = 900V, V = -5/+20V, d(on) DD GS I = 300 A, R = 2.5 , D G(ext) t Rise Time 72 ns r Timing relative to V Fig. 23 DS td(off ) Turn-off delay time 211 ns Note: IEC 60747-8-4, pg 83 Inductive load t Fall Time 56 ns f 1.7 2.0 IF = 300 A, V = 0 Fig. 10 GS V Diode Forward Voltage V SD 2.2 2.5 I = 300 A, V = 0 , T = 150 C Fig. 11 F J GS I = 300 A, V = 900 V, T = SD DS J Q Total Capacitive Charge 4.4 C C 25C, di /dt = 9 kA/s, V = -5 V SD GS Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R Thermal Resistance Juction-to-Case for MOSFET 0.067 0.071 Fig. 27 thJCM C/W R Thermal Resistance Juction-to-Case for Diode 0.060 0.065 Fig. 28 thJCD Additional Module Data Symbol Parameter Max. Unit Test Condtion W Weight 300 g M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 9 mm Terminal to terminal 30 mm Terminal to terminal Creepage Distance 40 mm Terminal to baseplate CAS300M17BM2,Rev. A 2