V 1.2 kV CAS325M12HM2 DS 1.2kV, 3.6 m All-Silicon Carbide E 9.3 mJ sw, Total 600V, 300A High Performance, Half-Bridge Module R 3.6 m DS(on) TM C2M MOSFET and Z-Rec Diode Features Package 65mm x 110mm x 10mm Ultra Low Loss, Low (5 nH) Inductance Ultra-Fast Switching Operation Zero Reverse Recover y Current from Diode Zero Turn-off Tail Current from MOSFE T Normally-off, Fail-safe Device Operation AlSiC Baseplate and Si3N4 AMB Substrate Ease of Paralleling High Temperature Packaging, T = 175 C J(max) AS9100 / ISO9001 Cer tified Manufacturing System Benefits Enables Compact, Lightweight Systems High Efficiency Operation Reduced Thermal Requirements Applications Part Number Package Marking High-Efficiency Conver ters / Inver ters Motor & Traction Drives CAS325M12HM2 Half-Bridge Module CAS325M12HM2 Smar t-Grid / Grid-Tied Distributed Generation Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Notes V Drain - Source Voltage 1.2 kV DSmax -10/+25 T = -55 to 150 C J V Gate - Source Voltage, Maximum values V GSmax -10/+23 T = -55 to 175 C J -5/+20 T = -55 to 150 C J Gate - Source Voltage, Recommended Operation V V GSop values -5/+18 T = -55 to 175 C J 444 T = 25 C T = 175 C C J I Continuous Drain Current A Fig. 17 D 256 T = 125C, T = 175 C C J T Junction Temperature 175 C Jmax T ,T Case and Storage Temperature Range -55 to +175 C C STG V Case Isolation Voltage 1.2 kV AC, 50 Hz , 1 min isol P Power Dissipation 1500 W TC = 25 C, TJ = 175 C (per switch) Fig. 16 D Subject to change without notice. 1 www.cree.com Datasheet: CAS325M12HM2, Rev. A, 12-2016Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDSS Drain - Source Blocking Voltage 1.2 kV V = -5 V, I = 2 mA GS D 2.0 2.6 4 V =V , I = 105 mA DS GS D V Gate Threshold Voltage V GS(th) 2.0 V =V , I = 105 mA, T = 175 C J DS GS D I Zero Gate Voltage Drain Current 720 2000 A V = 1.2 kV, V = -5 V DSS DS GS I Gate-Source Leakage Current 3.5 nA V = 20 V, V = 0 V GSS DS GS 3.6 4.3 V = 20 V, I = 400 A GS DS R On State Resistance m Fig. 5 DS(on) 7.6 V = 18 V, I = 400 A, T = 175 C GS DS J C Input Capacitance 19.5 iss f = 1 MHz, V = 0 V, V = 1000 V, Fig. 11, GS DS C Output Capacitance 1.54 oss nF V = 25 mV 12 AC C Reverse Transfer Capacitance 0.10 rss E on Turn-On Switching Energy 5.6 V = 600 V, V = -5V/+20V DD GS I = 300 A, R = 2 D G(ext) mJ Fig. 13 E Turn-Off Switching Energy Note: IEC 60747-8-4 Definitions Off 3.7 Q Gate-Source Charge 322 GS V = 800 V, V = -5V/+20V, DS GS Q Gate-Drain Charge 350 nC GD ID= 350 A, Per IEC 60747-8-4 Q Total Gate Charge 1127 G dff Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note 1.7 2.0 I = 350 A, V = -5 V F GS V Diode For ward Voltage V Fig. 6 SD 2.5 2.8 I = 350 A, T = 175 C, V = -5 V F J GS Q Total Capacitive Charge 4.3 C Includes Schottky & Body diodes C Note: The reverse recover y is purely capacitive Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R Thermal Resistance Juction-to-Case for MOSFE T 0.085 0.100 0.115 thJCM Fig. C/W 18,19 R Thermal Resistance Juction-to-Case for Diode 0.094 0.110 0.127 thJCD Additional Module Data Symbol Parameter Min. Typ. Max. Unit Test Condtion W Weight 140 g 0.9 1.1 1.3 Power Terminals, M4 Bolts M Mounting Torque Nm 3 4.5 5 Baseplate, M6 Bolts L Loop Inductance 5 nH CE CAS325M12HM2, Rev. A, 12-2016 2