VBH40-05B IXYS

VBH 40-05B TM V = 500 V Module with HiPerFET H-Bridge and DSS R = 116 m DSon Single Phase Mains Rectifier Bridge V = 1200 V RRM I =90A Preliminary data DAV25 pin configuration see outlines Application Mains Rectifier Bridge D1 - D4 primary side of mains supplied Symbol Conditions Maximum Ratings welding converters switched mode power supplies V 1200 V RRM induction heaters I T = 25C sine 180 45 A FAV25 C Features I T = 80C sine 180 33 A FAV80 C H-bridge with I T = 25C t = 10 ms sine 50 Hz 400 A FSM VJ TM HiPerFET technology: - low R DSon - unclamped inductive switching Symbol Conditions Characteristic Values (UIS) capability (T = 25C, unless otherwise specified) VJ - dv/dt ruggedness min. typ. max. - fast intrinsic reverse diode - Kelvin source for easy drive V I = 20 A T = 25C 1.1 1.2 V VJ F F - low inductive, symmetrical current T = 125C 1.0 V VJ paths I V = V T = 25C 0.02 mA VJ thermistor for internal temperature R R RRM T = 125C 0.4 mA VJ measurement package: R (per diode) 1.42 K/W thJC - high level of integration - only one R with heat transfer paste 2.8 K/W thJS power semiconductor module required for the whole primary side - solder terminals for PCB mounting - isolated DCB ceramic base plate IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved 1 - 3 0625VBH 40-05B MOSFET H - Bridge T1 - T4 Symbol Conditions Maximum Ratings V T = 25C to 150C 500 V DSS VJ V 20 V GS I T = 25C 40 A D25 C I T = 80C 30 A D80 C I (diode) T = 25C 40 A F25 C I (diode) T = 80C 30 A F80 C Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. R V = 10 V I = I 116 m D D80 DSon GS V V = 20 V I = 8 mA 2 4 V GSth D DS I V = 0.8 V V = 0 V T = 25C 0.4 mA VJ DSS DS DSS GS T = 125C 0.5 mA VJ I V = 20 V V = 0 V 0.2 A GSS GS DS Q 270 nC g V = 10 V V = 0.5 V I = 20A Q DSS 56 nC GS DS D gs Q 124 nC gd t 50 ns d(on) V = 10 V V = 0.5 V t 100 ns GS DS DSS r I = 20A R = 1 t 100 ns D G d(off) t 80 ns f V (diode) I = 20 A V = 0 V 1.5 V F GS F t (diode) I = 40 A -di/dt = 200 A/s V = 100V 300 ns rr DS F R 0.32 K/W thJC R with heat transfer paste 0.47 K/W thJS Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R T = 25C 1950 2057 2170 25 B 3560 K 25/100 2006 IXYS All rights reserved 2 - 3 0625