V 1.2 kV CAS300M12BM2 DS 1.2kV, 5.0 m All-Silicon Carbide E 12.0 mJ sw, Total 300A Half-Bridge Module R 5.0 m DS(on) TM C2M MOSFET and Z-Rec Diode Features Package 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications Part Number Package Marking Induction Heating Motor Drives CAS300M12BM2 Half-Bridge Module CAS300M12BM2 Solar and Wind Inverters UPS and SMPS Traction Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Notes V Drain - Source Voltage 1.2 kV DSmax V Gate - Source Voltage -10/+25 V Absolute Maximum values GSmax V Gate - Source Voltage -5/20 V Recommended Operational Values GSop 404 V = 20 V, T = 25 C GS C I Continuous Drain Current A Fig. 24 D 285 V = 20 V, T = 90 C GS C Pulse width t = 200 s Repetition rate P I Pulsed Drain Current 1500 A D(pulse) limited by T ,T = 25C jmax C T Junction Temperature 150 C Jmax T ,T Case and Storage Temperature Range -40 to +125 C C STG V Case Isolation Voltage 4.0 kV AC, 50 Hz , 1 min isol L Stray Inductance 14 nH Measured between terminals 2 and 3 Stray P Power Dissipation 1660 W T = 25 C, T = 150 C Fig. 23 C J D Subject to change without notice. 1 www.cree.com Datasheet: CAS300M12BM2,Rev. -Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain - Source Breakdown Voltage 1.2 kV V = 0 V, I = 1 mA (BR)DSS GS, D V Gate Threshold Voltage 1.8 2.3 V V = 10 V I = 15 mA Fig 7 GS(th) DS , D 500 2000 A V = 1.2 kV, V = 0V DS GS I Zero Gate Voltage Drain Current DSS 1000 V = 1.2 kV,V = 0V, T = 150 C DS GS J I Gate-Source Leakage Current 1 100 nA V = 20 V, V = 0V GSS DS GS 5.0 5.7 V = 20 V, I = 300 A GS DS Fig. 4, R DS(on) On State Resistance m V = 20 V, I = 300 A, GS DS 5, 6 8.6 9.8 T = 150 C J 94.8 V = 20 V I = 300 A DS , DS g fs Transconductance S Fig. 8 93.3 VDS = 20 V, ID = 300 A, TJ = 150 C C iss Input Capacitance 11.7 f = 200 kHz, VDS = 600 V, Fig. C oss Output Capacitance 2.55 nF V = 25 mV 16, 17 AC C Reverse Transfer Capacitance 0.07 rss E on Turn-On Switching Energy 6.05 mJ VDD = 600 V, VGS = -5V/+20V Fig. ID = 300 A, RG(ext) = 2.5 19, 20 E Turn-Off Switching Energy Off Note: IEC 60747-8-4 Definitions 5.95 mJ R Internal Gate Resistance 3.0 f = 200 kHz, V = 25 mV AC G (int) Q Gate-Source Charge 166 GS V = 800 V, V = -5V/+20V, DD GS Q Gate-Drain Charge 475 nC Fig. 15 GD I = 300 A, Per JEDEC24 pg 27 D QG Total Gate Charge 1025 t Turn-on delay time 76 ns V = 600V, V = -5/+20V, d(on) DD GS I = 300 A, R = 2.5 , D G(ext) t Rise Time 68 ns r Timing relative to V Fig. 25 DS t d(off ) Turn-off delay time 168 ns Note: IEC 60747-8-4, pg 83 Inductive load t Fall Time 43 ns f Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note 1.7 2.0 IF = 300 A, V = 0 GS Fig. 9, VSD Diode Forward Voltage V 10, 11 2.2 2.5 IF = 300 A, TJ = 150 C, V = 0 GS Q Total Capacitive Charge 3.2 C C Note: The reverse recovery is purely capacitive Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R Thermal Resistance Juction-to-Case for MOSFET 0.070 0.075 T = 90 C, P = 150 W c D thJCM Fig. 27, C/W 28 R Thermal Resistance Juction-to-Case for Diode 0.073 0.076 T = 90 C, P = 130 W c D thJCD Additional Module Data Symbol Parameter Max. Unit Test Condtion W Weight 300 g M Mounting Torque 5 Nm To heatsink and terminals Clearance Distance 12 mm Terminal to terminal 30 mm Terminal to terminal Creepage Distance 40 mm Terminal to baseplate CAS300M12BM2,Rev. - 2