4V Drive Pch MOSFET
RP1E050RP
Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET
MPT6
(Single)
(6) (5) (4)
Features
1) Low On-resistance.
2) High power package.
(1) (2) (3)
3) 4V drive.
Application
Switching
Packaging specifications Inner circuit
(6) (5) (4)
Package Taping
Type
Code TR
Basic ordering unit (pieces) 1000
RP1E050RP
2
(1) Source
1
(2) Source
Absolute maximum ratings (Ta = 25 C)
(3) Gate
(4) Drain (1) (2) (3)
Parameter Symbol Limits Unit
(5) Drain
1 ESD PROTECTION DIODE
(6) Drain 2 BODY DIODE
Drain-source voltage V 30 V
DSS
Gate-source voltage V 20 V
GSS
Continuous I 5A
D
Drain current
*1
Pulsed I 20 A
DP
Continuous I 1.6 A
Source current
S
(Body Diode) *1
Pulsed I 20 A
SP
*2
Power dissipation P 2.0 W
D
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Parameter Symbol Limits Unit
*
Channel to Ambient Rth (ch-a) 62.5 C / W
*Mounted on a ceramic board.
www.rohm.com
2010.07 - Rev.B
1/5
2010 ROHM Co., Ltd. All rights reserved.RP1E050RP Data Sheet
Electrical characteristics (Ta = 25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage I -- 10 AV = 20V, V =0V
GSS GS DS
Drain-source breakdown voltage V 30 - - V I = 1mA, V =0V
(BR)DSS D GS
Zero gate voltage drain current I -- 1 AV = 30V, V =0V
DSS DS GS
Gate threshold voltage V 1.0 - 2.5 V V = 10V, I = 1mA
GS (th) DS D
-36 50 I = 5A, V = 10V
D GS
Static drain-source on-state
*
R
DS (on) -52 72 m I = 2.5A, V = 4.5V
D GS
resistance
-58 80 I = 2.5A, V = 4.0V
D GS
*
Forward transistor admittance l Y l4 - - S I = 5A, V = 10V
fs D DS
Input capacitance C - 850 - pF V = 10V
iss DS
Output capacitance C - 120 - pF V =0V
oss GS
Reverse transfer capacitance C - 120 - pF f=1MHz
rss
Turn-on delay time t -9 - nsI = 2.5A, V 15V
*
d(on) D DD
Rise time t - 25 - ns V = 10V
*
r GS
Turn-off delay time t - 55 - ns R =6.0
*
d(off) L
Fall time t * - 30 - ns R =10
f G
Total gate charge Q * - 9.2 - nC I = 5A, V 15V
g D DD
Gate-source charge Q - 2.4 - nC V = 5V R =3.0
*
gs GS L
Gate-drain charge Q - 3.6 - nC R =10
*
gd G
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
*
Forward Voltage V -- 1.2 V I = 5A, V =0V
SD s GS
*Pulsed
www.rohm.com
2/5 2010.07- Rev.B
2010 ROHM Co., Ltd. All rights reserved.