X-On Electronics has gained recognition as a prominent supplier of RPI-0128T81 Optical Switches, Transmissive, Phototransistor Output across the USA, India, Europe, Australia, and various other global locations. RPI-0128T81 Optical Switches, Transmissive, Phototransistor Output are a product manufactured by ROHM. We provide cost-effective solutions for Optical Switches, Transmissive, Phototransistor Output, ensuring timely deliveries around the world.

RPI-0128T81 ROHM

RPI-0128T81 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.RPI-0128T81
Manufacturer: ROHM
Category: Optical Switches, Transmissive, Phototransistor Output
Description: ROHM Semiconductor Optical Switches, Transmissive, Phototransistor Output PHOTOINTERRUPTER ULTRAMIN SMD TYPE
Datasheet: RPI-0128T81 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7997 ea
Line Total: USD 0.8 
Availability - 1915
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1915
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7997
10 : USD 0.6633
100 : USD 0.4224
500 : USD 0.374
1000 : USD 0.3366
2000 : USD 0.3278
4000 : USD 0.3179
10000 : USD 0.3047
24000 : USD 0.3025

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Slot Width
Aperture Width
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Mounting Style
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
If - Forward Current
Brand
Factory Pack Quantity :
Output Type
Sensing Distance
Sensing Method
Wavelength
Number Of Channels
Cnhts
Fall Time
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Rise Time
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RPI-0128T81 from our Optical Switches, Transmissive, Phototransistor Output category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RPI-0128T81 and other electronic components in the Optical Switches, Transmissive, Phototransistor Output category and beyond.

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DISTANCE : d (mm) RPI-0128 Photointerrupter, Ultraminiature SMD type Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Applications Forward current IF 30 mA DSC(Digital steal camera) Reverse voltage VR 5 V DVC(Digital video camera) Power dissipation PD 80 mW Digital handy phone Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Features Collector current IC 30 mA 1) Ultraminiature SMD type. Collector power dissipation PC 80 mW 2) Gap 1.2mm. Operating temperature Topr 25 to +85 C Storage temperature Tstg 30 to +85 C Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 1.2 1.35 1.5 VIF=5mA IR 10 A VR=5V Reverse current Dark current ICEO 0.1 A VCE=10V Peak sensitivity wavelength P 800 nm IC1 5.0 25 mA VCE=5V, IF=20mA Collector current IC2 1.0 5 mA VCE=5V, IF=5mA Collector-emitter saturation voltage VCE(sat) 0.4 V IF=20mA, IC=0.1mA Rise time tr 10 s Response time VCC=5V, IF=20mA, RL=100 Fall time 10 s tf Cut-off frequency fC 1 MHz IF=5mA Non-coherent Infrared light emitting diode used. Peak light emitting wavelength P 850 nm VCC=5V, IC=1mA, RL=100 Response time tr tf 10 s This product is not designed to be protected against electromagnetic wave. Maximum sensitivity wavelength P 800 nm Electrical and optical characteristics curves 120 20 35 100 30 16 d 25 80 Ta=75Ta=75Ta=75CCC 12 505050CCC 20 252525CCC 60 000CCC 15 252525CCC 8 40 10 4 20 5 0 0 0 00.511.52 0 0.5 1.0 1.5 2.0 -25 0 25 50 75 100 DISTANCE : d (mm) FORWARD VOLTAGE : VF (V) AMBIENT TEMPERATURE : Ta (C) Fig.1 Relative output current vs. Fig.3 Forward current vs. forward distance ( ) Fig.2 Forward current falloff voltage 120 140 d 120 120 100 100 100 PD PC 80 IIIFFF=5mA=5mA=5mA 80 80 60 60 60 20mA20mA20mA 40 40 40 20 20 20 VCE=5V 0 0 0 20 0 20 40 60 80 100 -25 0 25 50 75 100 0 0.4 0.8 1.2 1.6 AMBIENT TEMPERATURE : Ta (C) AMBIENT TEMPERATURE : Ta (C) Fig.4 Relative output current vs. Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient distance ( ) dissipation vs. ambient temperature temperature RELATIVE COLLECTOR CURRENT : Ic (%) Output photo- Input (LED) Photo Infrared Transfer Output Input ( ) transistor light characteristics charac- charac- transistor emitter teristics teristics diode RELATIVE COLLECTOR CURRENT : Ic (%) POWER DISSIPATION / COLLECTOR POWER DISSIPTION : PD/PC (mW) FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) RELATIVE COLLECTOR CURRENT : Ic (%)Dimensions (Unit : mm) Notes: 1. Unspecified tolerance 2.50.15 shall be 0.2 . 2. Dimension in parenthesis are show for reference. 1.20.15 2-0.1 (0.2) C0.3 A Gate A-A Cross section A 2 3 1 4 0.9 2 Internal connection diagram Anode Collector Cathode Emitter 800 14 1000 VCC=5V 700 IC=0.1mA 12 tr 600 100 10 VCE=30V tf Ta=75C 500 VCE=20V 50C 8 10 VCE=10V 25C 400 0C 6 25C 300 1 4 200 0.1 2 VCE=5V 100 Ta=25C 0 0 25 0 25 50 75 100 110 100 0 5 10 15 20 FORWARD CURRENT : IF (mA) AMBIENT TEMPERATURE : Ta (C) LOAD RESISTANCE : RL (k) Fig.7 Collector current vs. Fig.8 Response time vs. Fig.9 Dark current vs. forward current load resistance ambient temperature 16 Input VCC IF=20mA 14 12 15mA IF=5mA Input 10 Output 90% RL 8 10mA 10% Output 6 20mA td 4 tr tf 5mA td : Delay time 2 Rise time (time for output current to rise from t r : 10% to 90% of peak current) 0 02 46 8 10 t f : Fall time (time for output current to fall from 90% COLLECTOR TO EMITTER VOLTAGE: VCE (V) to 10% of peak current) 2010.07 Rev.B Fig.10 Output characteristics Fig.11 Response time measurement circuit COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 0.2 1.80.1 RESPONSE TIME : tr (s) 0.45 0.6 +0.1 1.60.1 0.6 0.05 -0.05 1.4 (0.34) Optical center DARK CURRENT : ICEO (nA) (0.65) (0.1)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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