RPI-1050 ROHM

4-Direction Detector Surface Mount type RPI-1050 Datasheet lApplications lDimensions (Unit : mm) Note : *1 Unspecified tolerance shall be 0.2. Stamp (year, week, DSCs day of the week) DVCs 1PIN Mark Projectors Mark side (symbol of check in company) Pattern lFeatures 1) Surface mount 2) Optical Internal connection diagram 3) 4-way detection possible Anode Cathode Collector2 Collector1 Detector2 Detector1 Emitter2 Emitter1 lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Value Unit I Forward current 35 mA F Input Reverse voltage V 5 V (Infrared light R emitting diode) Power dissipation P 80 mW D V Collector-emitter voltage 30 V CEO V Emitter-collector voltage 4.5 V ECO Output (Phototransistor) Collector current I 30 mA C P Collector dissipation 80 mW C T Operating temperature -25 to +85 C opr Storage temperature T C -30 to +85 stg www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.A 1/3Data Sheet RPI-1050 lElectrical and optical characteristics (Ta = 25C) 1) Input characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. Forward voltage V I =5mA - 1.35 1.6 V F F I V =5V Reverse current - - 10 mA R R Peak light emitting wavelength l I =5mA - 850 - nm p F * Non-coherent Infrared light emitting diode used. 2) Output characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. I V =10V Dark current - - 0.5 mA CED CE l Peak sensitivity wavelength - 800 - nm p 3) Transfer characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. V =5V CE Collector current I 150 - - C I =5mA F mA V =5V CE I Leak current - - 12 leak I =5mA F I =20mA F Collector-emitter V - - 0.4 V CE(sat) saturation voltage I =0.1mA C Rise time tr - 10 - V =5V, I =20mA CC F Response time ms R =100W L Fall time tf - 10 - www.rohm.com 2013 ROHM Co., Ltd. All rights reserved. 2013.07 - Rev.A 2/3