X-On Electronics has gained recognition as a prominent supplier of RQ1A060ZPTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ1A060ZPTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ1A060ZPTR ROHM

RQ1A060ZPTR electronic component of ROHM
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See Product Specifications
Part No.RQ1A060ZPTR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET SW MOSFET MID PWR P-CH 12V -6A
Datasheet: RQ1A060ZPTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8547 ea
Line Total: USD 0.85 
Availability - 3361
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3361
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8547
10 : USD 0.6633
100 : USD 0.4796
500 : USD 0.3993
1000 : USD 0.3729
3000 : USD 0.3355
6000 : USD 0.3223

172
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 152
Multiples : 1
152 : USD 0.6984

53
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 1
30 : USD 1.3747
50 : USD 1.196

2516
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 152
Multiples : 1
152 : USD 0.7058

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 152
Multiples : 1
152 : USD 0.6984
250 : USD 0.6704
500 : USD 0.6463
1000 : USD 0.6251
2500 : USD 0.6066

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the RQ1A060ZPTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ1A060ZPTR and other electronic components in the MOSFETs category and beyond.

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RQ1A060ZP Datasheet Pch -12V -6A Middle Power MOSFET llOutline TSMT8 V -12V DSS R (Max.) 23m DS(on) I 6A D P 1.5W D llInner circuit llFeatures 1) Low on - resistance. 2) -1.5V Drive 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking YH llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS I Continuous drain current 6 A D *1 I Pulsed drain current 24 A D,pulse V Gate - Source voltage 10 V GSS *2 P 1.5 W D Power dissipation *3 P 0.7 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 RQ1A060ZP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 83.3 /W thJA Thermal resistance, junction - ambient *3 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -1 A DSS DS GS drain current Gate - Source leakage current I V = 10V, V = 0V - - 10 A GSS GS DS V Gate threshold voltage V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -6A - 16 23 GS D V = -2.5V, I = -3A - 22 31 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -3A - 28 42 GS D V = -1.5V, I = -1.2A - 39 78 GS D R Gate input resistance f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = -6V, I = -6A 7.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (20200.8mm) *4 Pulsed www.rohm.com 2/11 20150730 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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