RQ1A070AP Pch -12V -7A Power MOSFET Datasheet lOutline (8) TSMT8 V -12V DSS (7) (6) R (Max.) (5) 14mW DS(on) I (1) -7A D (2) (3) P (4) 1.5W D lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain (2) Source (6) Drain 2) Built-in G-S Protection Diode. (3) Source (7) Drain (4) Gate (8) Drain 3) Small Surface Mount Package (TSMT8). 4) Pb-free lead plating RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 Road SW Type Basic ordering unit (pcs) 3,000 Taping code TR Marking SG lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V V -12 DSS *1 Continuous drain current I 7 A D *2 Pulsed drain current A I 28 D,pulse V Gate - Source voltage 0 to -8 V GSS *3 P 1.5 W D Power dissipation *4 0.55 W P D T Junction temperature 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 1/11Data Sheet RQ1A070AP lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 83.3 C/W thJA *4 Thermal resistance, junction - ambient R - - 227 C/W thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V Breakdown voltage I = -1mA (BR)DSS D - 12 - mV/ C temperature coefficient T referenced to 25C j I V = -12V, V = 0V Zero gate voltage drain current - - -10 mA DSS DS GS Gate - Source leakage current I V = -8V, V = 0V - - -10 mA GSS GS DS V V = -6V, I = -1mA Gate threshold voltage -0.3 - -1 V GS (th) DS D V I = -1mA Gate threshold voltage (GS)th D - 2.6 - mV/C temperature coefficient T referenced to 25C j V = -4.5V, I = -7.0A - 10 14 GS D V = -2.5V, I = -3.5A - 13 19 GS D Static drain - source *5 V = -1.8V, I = -3.5A R - 18 27 m W GS D DS(on) on - state resistance V = -1.5V, I = -1.4A - 24 48 GS D V = -10V, I = -7A, T =125C - 22 31 GS D j Gate input resistannce R f = 1MHz, open drain - 8.0 - W G *5 Transconductance g V = 10V, I = -7.0A 11 22 - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (20200.8mm) www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 2/11