X-On Electronics has gained recognition as a prominent supplier of RP1E100RPTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RP1E100RPTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RP1E100RPTR ROHM

RP1E100RPTR electronic component of ROHM
RP1E100RPTR ROHM
RP1E100RPTR MOSFETs
RP1E100RPTR  Semiconductors

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See Product Specifications
Part No. RP1E100RPTR
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET P-CH 30V 10A 6-Pin MPT T/R
Datasheet: RP1E100RPTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12: USD 1.5547 ea
Line Total: USD 18.66 
Availability - 0
MOQ: 12  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 12
Multiples : 1
12 : USD 1.5547

   
Manufacturer
Product Category
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Channel Mode
Deleted
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the RP1E100RPTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RP1E100RPTR and other electronic components in the MOSFETs category and beyond.

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4V Drive Pch MOSFET RP1E100RP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low On-resistance. 2) High power package. (1) (2) (3) 3) 4V drive. Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 1000 RP1E100RP 2 (1) Source (2) Source 1 (3) Gate Absolute maximum ratings (Ta = 25 C) (4) Drain (1) (2) (3) (5) Drain Parameter Symbol Limits Unit 1 ESD PROTECTION DIODE (6) Drain 2 BODY DIODE Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I 10 A D Drain current *1 Pulsed I 40 A DP Continuous I 1.6 A Source current S (Body Diode) *1 Pulsed I 40 A SP *2 Power dissipation P 2.0 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 62.5 C / W *Mounted on a ceramic board. www.rohm.com 2010.07 - Rev.B 1/5 2010 ROHM Co., Ltd. All rights reserved.RP1E100RP Data Sheet Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I = 1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV = 30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V = 10V, I = 1mA GS (th) DS D - 9.0 12.6 I = 10A, V = 10V D GS Static drain-source on-state * R DS (on) - 12.5 17.5 m I = 5A, V = 4.5V D GS resistance - 14.0 19.6 I = 5A, V = 4.0V D GS * Forward transfer admittance l Y l13 - - S I = 10A, V = 10V fs D DS Input capacitance C - 3600 - pF V = 10V iss DS Output capacitance C - 450 - pF V =0V oss GS Reverse transfer capacitance C - 450 - pF f=1MHz rss Turn-on delay time t - 25 - ns I = 5A, V 15V * d(on) D DD Rise time t * - 60 - ns V = 10V r GS Turn-off delay time t * - 150 - ns R =3.0 d(off) L * Fall time t - 100 - ns R =10 f G * Total gate charge Q - 39 - nC I = 10A, V 15V g D DD Gate-source charge Q * - 8.5 - nC V = 5V R =1.5 gs GS L Gate-drain charge Q * - 13.5 - nC R =10 gd G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V -- 1.2 V I = 10A, V =0V SD s GS *Pulsed www.rohm.com 2/5 2010.07 - Rev.B 2010 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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