4V Drive Pch MOSFET
RP1E090RP
Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET
MPT6
(6) (5) (4)
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
(1) (2) (3)
Application
Switching
Packaging specifications Inner circuit
Package Taping
(6) (5) (4)
Type
Code TR
Basic ordering unit (pieces) 1000
RP1E090RP
2
(1) Source
1
Absolute maximum ratings (Ta = 25 C)
(2) Source
(3) Gate
Parameter Symbol Limits Unit
(1) (2) (3)
(4) Drain
Drain-source voltage V 30 V (5) Drain
DSS
1 ESD PROTECTION DIODE
(6) Drain
2 BODY DIODE
Gate-source voltage V 20 V
GSS
Continuous I 9A
D
Drain current
*1
Pulsed I 36 A
DP
Continuous I 1.6 A
Source current
S
*1
(Body Diode)
Pulsed I 36 A
SP
*2
Power dissipation P 2.0 W
D
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Parameter Symbol Limits Unit
*
Channel to Ambient Rth (ch-a) 62.5 C / W
*Mounted on a ceramic board.
www.rohm.com
2010.06 - Rev.A
1/5
2010 ROHM Co., Ltd. All rights reserved.RP1E090RP Data Sheet
Electrical characteristics (Ta = 25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage I -- 10 AV =20V, V =0V
GSS GS DS
Drain-source breakdown voltage V 30 - - V I = 1mA, V =0V
(BR)DSS D GS
Zero gate voltage drain current I -- 1 AV = 30V, V =0V
DSS DS GS
Gate threshold voltage V 1.0 - 2.5 V V = 10V, I = 1mA
GS (th) DS D
- 13 16.9 I = 9A, V = 10V
D GS
Static drain-source on-state *
R
DS (on) - 18 25.2 m I = 9A, V = 4.5V
D GS
resistance
21 29.4 I = 9A, V = 4.0V
D GS
**
Forward transfer admittance l Y l10 - - S I = 9A, V = 10V
fs D DS
Input capacitance C - 3000 - pF V = 10V
iss DS
Output capacitance C - 360 - pF V =0V
oss GS
Reverse transfer capacitance C - 360 - pF f=1MHz
rss
Turn-on delay time t - 20 - ns I = 4.5A, V 15V
**
d(on) D DD
Rise time t ** - 30 - ns V = 10V
r GS
Turn-off delay time t ** - 135 - ns R =3.3
d(off) L
**
Fall time t - 80 - ns R =10
f G
**
Total gate charge Q - 30 - nC I = 9A
g D
Gate-source charge Q ** -7 - nCV -15V
gs DD
Gate-drain charge Q ** - 11 - nC V = 5V
gd GS
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
*
Forward Voltage V -- 1.2 V I = 9A, V =0V
SD s GS
*Pulsed
www.rohm.com
2/5 2010.06 - Rev.A
2010 ROHM Co., Ltd. All rights reserved.