C6D10065A
V = 650 V
RRM
Silicon Carbide Schottky Diode
I (T =155C) = 10 A
F C
Z -Rec Rectifier
Q = 34 nC
c
Features Package
th
New 6 Generation Technology
Low Forward Voltage Drop (V )
F
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Low Leakage Current (I )
r
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on V
F
TO-220-2
Benefits
Higher System Level Efficiency PIN 1
Increase System Power Density CASE
PIN 2
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Part Number Package Marking
Switch Mode Power Supplies (SMPS)
C6D10065A TO-220-2 C6D10065
Server/Telecom Power Supplies
Industrial Power Supplies
Solar
UPS
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Repetitive Peak Reverse Voltage 650 V
RRM
V DC Blocking Voltage 650 V
DC
37 T =25C
C
I Continuous Forward Current 19 A T =125C Fig. 3
F C
10 T =155C
C
45 T =25C, t = 10 ms, Half Sine Wave
C P
I Repetitive Peak Forward Surge Current A
FRM
27 T =110C, t =10 ms, Half Sine Wave
C P
86 T =25C, t = 10 ms, Half Sine Wave
C p
I Non-Repetitive Peak Forward Surge Current A Fig. 8
FSM
75 T =110C, t = 10 ms, Half Sine Wave
C p
1250 T =25C, t = 10 s, Pulse
C P
I Non-Repetitive Peak Forward Surge Current A Fig. 8
F,Max
1100 T =110C, t = 10 s, Pulse
C P
109 T =25C
C
P Power Dissipation W Fig. 4
tot
47 T =110C
C
-55 to
T , T Operating Junction and Storage Temperature C
J stg
+175
1 Nm
M3 Screw
TO-220 Mounting Torque
8.8 lbf-in 6-32 Screw
C6D10065A, Rev. -, 04-2019
1Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.27 1.50 I = 10 A T =25C
F J
V Forward Voltage V Fig. 1
F
1.37 1.60 I = 10 A T =175C
F J
2 50 V = 650 V T =25C
R J
I Reverse Current A Fig. 2
R
15 200 V = 650 V T =175C
R J
V = 400 V, I = 10A
R F
Q Total Capacitive Charge 34 nC Fig. 5
C
T = 25C
J
611 V = 0 V, T = 25C, f = 1 MHz
R J
C Total Capacitance 67 pF V = 200 V, T = 25C, f = 1 MHz Fig. 6
R J
53 V = 400 V, T = 25C, f = 1 MHz
R J
E Capacitance Stored Energy 5.2 J V = 400 V Fig. 7
C R
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
R Thermal Resistance from Junction to Case 1.38 C/W Fig. 9
JC
Typical Performance
100
20
18
T = -55C
J
T = 25C
J
80
16
T = 75C
J
T = 125C
J
14
T = 175C
J
12 60
T = 175 C
J
10
T = 125 C
J
8 40
T = 75 C
J
6
T = 25 C
J
4
20
T = -55 C
J
2
0
0
0.50 0.75 1.00 1.25 1.50 1.75 2.00
0 100 200 300 400 500 600 700 800
Foward Voltage, V (V)
V (V) V (V)
V (V) F ReverseV Vo (V)ltage, V (V)
R
F
F R R
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
C6D10065A, Rev. -, 04-2019
2
Foward Current, I (A)
F
II (A) (A)
F F
Reverse Leakage Current, I (uA)
RR
I ( mA)
I ( mA)
R
R