X-On Electronics has gained recognition as a prominent supplier of C4D20120D Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. C4D20120D Schottky Diodes & Rectifiers are a product manufactured by Wolfspeed. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

C4D20120D Wolfspeed

Hot C4D20120D electronic component of Wolfspeed
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Part No.C4D20120D
Manufacturer: Wolfspeed
Category: Schottky Diodes & Rectifiers
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2x10A; 176W; TO247-3
Datasheet: C4D20120D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.1105 ea
Line Total: USD 14.11 
Availability - 944
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
944
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 14.1105
10 : USD 13.3975
30 : USD 10.051
120 : USD 9.66
270 : USD 9.6485

415
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 5
Multiples : 1
5 : USD 15.08

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Type
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the C4D20120D from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the C4D20120D and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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C4D20120D V = 1200 V RRM Silicon Carbide Schottky Diode ** I (T =135C) = 33 A F C Z -Rec Rectifier ** Q = 104 nC c Features Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on V F Benefits TO-247-3 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C4D20120D TO-247-3 C4D20120 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Blocking Voltage 1200 V DC 34/68 T =25C C Continuous Forward Current I 16.5/33 A T =135C Fig. 3 F C (Per Leg/Device) 10/20 T =157C C 47* T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 31.5* T -110C, t =10 ms, Half Sine Pulse C P 71* T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 59.5* T =110C, t =10 ms, Half Sine Pulse C P 750* T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 620* T =110C, t =10 m s, Pulse C P 176/352 T =25C C P Power Dissipation(Per Leg/Device) W Fig. 4 tot 76/152 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 25* T =25C, t =10 ms 2 2 2 C P i dt i t value A s 17.5* T =110C, t =10 ms C P -55 to T Operating Junction Range C J +175 -55 to T Storage Temperature Range C stg +135 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw * ** Per Leg, Per Device 1 C4D20120D Rev. F, 09-2016V Forward Voltage (V) V Reverse Voltage (V) R F Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 10 A T =25C F J V Forward Voltage V Fig. 1 F 2.2 3 I = 10 A T =175C F J 30 250 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 55 350 V = 1200 V T =175C R J V = 800 V, I = 10A R F Q Total Capacitive Charge 52 nC di /dt = 200 A/s Fig. 5 C T = 25C J 754 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 45 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 38 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 14.5 J V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note * 0.85 R Thermal Resistance from Junction to Case C/W Fig. 9 JC ** 0.43 * ** Per Leg, Per Device Typical Performance (Per Leg) 700 2020 0.0007 T =-55C 1818 J T = 25C J 0.0006600 T = 75C J 1616 T =125C J T =175C J 500 0.0005 14 14 12 12 0.0004400 1010 0.0003 300 8 8 T =-55C J T = 25C 66 200 0.0002 J T = 75C J T =125C J 4 4 T =175C J 0.0001 100 2 2 0 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 0 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 V FoVrw (V)ard Voltage V RevVers (V)e Voltage F F R R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D20120D Rev. F, 09-2016 I (A) I Forward Current F F I Reverse Current (A) R I (A) R I Forward Current (A) F I Reverse Current (A) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Wolfspeed / Cree
Wolfspeed(CREE)
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