C4D20120D V = 1200 V RRM Silicon Carbide Schottky Diode ** I (T =135C) = 33 A F C Z -Rec Rectifier ** Q = 104 nC c Features Package 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on V F Benefits TO-247-3 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Part Number Package Marking Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages C4D20120D TO-247-3 C4D20120 Free Wheeling Diodes in Inverter stages AC/DC converters Maximum Ratings (T =25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V Surge Peak Reverse Voltage 1300 V RSM V DC Blocking Voltage 1200 V DC 34/68 T =25C C Continuous Forward Current I 16.5/33 A T =135C Fig. 3 F C (Per Leg/Device) 10/20 T =157C C 47* T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 31.5* T -110C, t =10 ms, Half Sine Pulse C P 71* T =25C, t =10 ms, Half Sine Pulse C P I Non-Repetitive Peak Forward Surge Current A Fig. 8 FSM 59.5* T =110C, t =10 ms, Half Sine Pulse C P 750* T =25C, t =10 m s, Pulse C P I Non-Repetitive Peak Forward Current A Fig. 8 F,Max 620* T =110C, t =10 m s, Pulse C P 176/352 T =25C C P Power Dissipation(Per Leg/Device) W Fig. 4 tot 76/152 T =110C C dV/dt Diode dV/dt ruggedness 200 V/ns V =0-960V R 25* T =25C, t =10 ms 2 2 2 C P i dt i t value A s 17.5* T =110C, t =10 ms C P -55 to T Operating Junction Range C J +175 -55 to T Storage Temperature Range C stg +135 1 Nm M3 Screw TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw * ** Per Leg, Per Device 1 C4D20120D Rev. F, 09-2016V Forward Voltage (V) V Reverse Voltage (V) R F Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 10 A T =25C F J V Forward Voltage V Fig. 1 F 2.2 3 I = 10 A T =175C F J 30 250 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 55 350 V = 1200 V T =175C R J V = 800 V, I = 10A R F Q Total Capacitive Charge 52 nC di /dt = 200 A/s Fig. 5 C T = 25C J 754 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 45 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 38 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 14.5 J V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note * 0.85 R Thermal Resistance from Junction to Case C/W Fig. 9 JC ** 0.43 * ** Per Leg, Per Device Typical Performance (Per Leg) 700 2020 0.0007 T =-55C 1818 J T = 25C J 0.0006600 T = 75C J 1616 T =125C J T =175C J 500 0.0005 14 14 12 12 0.0004400 1010 0.0003 300 8 8 T =-55C J T = 25C 66 200 0.0002 J T = 75C J T =125C J 4 4 T =175C J 0.0001 100 2 2 0 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 0 0.5 1 1.5 2 2.5 3 3.5 0 500 1000 1500 2000 V FoVrw (V)ard Voltage V RevVers (V)e Voltage F F R R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D20120D Rev. F, 09-2016 I (A) I Forward Current F F I Reverse Current (A) R I (A) R I Forward Current (A) F I Reverse Current (A) R