6 NPA1003QA GaN on Silicon Power Amplifier Rev. V2 20 - 1500 MHz, 28 V, 5 W Features Functional Schematic GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications N/C N/C N/C N/C Broadband Operation from 20 - 1500 MHz 16 15 14 13 28 V Operation 16 dB Gain 1 GHz N/C 1 12 N/C 42% PAE 1 GHz 100% RF Tested 50 Input / Output Matched RF / V 2 11 RF / V IN G OUT D Lead-Free 4 mm 16-lead QFN plastic Package RoHS* Compliant and 260C Reflow Compatible RF / V 3 10 RF / V IN G OUT D 17 Paddle Description N/C 4 9 N/C The NPA1003QA is a GaN on silicon power amplifier optimized for 20 - 1500 MHz operation. 5 6 7 8 This amplifier has been designed for saturated and N/C N/C N/C N/C linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 16-lead QFN plastic 1,2 package. Pin Designations Pin Pin Name Function The NPA1003QA is ideally suited for broadband general purpose, test and measurement, defense 1 N/C No Connection communications, land mobile radio and wireless infrastructure. 2, 3 RF / V RF Input / Gate Voltage IN G 4 - 9 N/C No Connection 10, 11 RF / V RF Output / Drain Voltage OUT D Ordering Information 12 - 16 N/C No Connection Part Number Package 2 17 Paddle Ground NPA1003QA Bulk 1. All no connection pins may be left floating or grounded. 2. The exposed pad centered on the package bottom must be NPA1003QA-SMBPPR sample connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: NPA1003QA GaN on Silicon Power Amplifier Rev. V2 20 - 1500 MHz, 28 V, 5 W RF Electrical Specifications: T = +25C , V = 28 V, I = 100 mA C DS DQ Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 1000 MHz G 18 dB SS Saturated Output Power CW, 1000 MHz P 38.5 dBm SAT Drain Efficiency at Saturation CW, 1000 MHz 50 % SAT Noise Figure CW, 1000 MHz NF 2.0 dB Power Gain CW, 1000 MHz, P = 5 W G 14 16 % OUT P Power Added Efficiency CW, 1000 MHz, P = 5 W PAE 38 42 % OUT Ruggedness All phase angles VSWR=10:1, No Device Damage DC Electrical Specifications: T = +25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 100 V I 2 mA GS DS DLK Gate-Source Leakage Current V = -8 V, V = 0 V I 1 mA GS DS GLK Gate Threshold Voltage V = 28 V, I = 2 mA V -2.5 -1.5 -0.5 V DS D T Gate Quiescent Voltage V = 28 V, I = 88 mA V -2.1 -1.2 -0.3 V DS D GSQ On Resistance V = 2 V, I = 15 mA R 1.6 DS D ON Maximum Drain Current V = 7 V pulsed, pulse width 300 s I , . 1.5 A DS D MAX 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: