RF2317 LINEAR CATV AMPLIFIER Package Style: CJ2BAT0 NC 1 16 NC Features GND 2 15 GND DC to 3.0GHz Operation GND 3 14 GND Internally Matched Input and Output RF IN 4 13 RF OUT 15dB Small Signal Gain NC 5 12 NC 4.8dB Noise Figure at 900MHz GND 6 11 GND 38dBm Output IP3 at GND 7 10 GND 900MHz Single 9V to 12V Power NC 8 9 NC Supply Apllications Functional Block Diagram CATV Distribution Amplifiers Product Description Cable Modems The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device Broadband Gain Blocks is manufactured on an advanced gallium arsenide heterojunction bipolar transistor Laser Diode Driver (HBT) process, and has been designed for use as an easily cascadable 75 gain block. The gain flatness of better than 0.5dB from 50MHz to 1000MHz, and the Return Channel Amplifier high linearity, make this part ideal for cable TV applications. Other applications Base Stations include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3GHz. The device is self-contained with 75 input and output impedances and requires only two external DC biasing elements to operate as specified. Ordering Information RF2317 Sample bag with 25 pieces RF2317SR 7 Sample reel with 100 pieces RF2317TR7 7 Reel with 750 pieces RF2317TR13 13 Reel with 2500 pieces RF2317 50 1000MHz PCBA with 5-piece sample bag RF2317 75 1000MHz PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT SiGe BiCMOS GaAs pHEMT GaN HEMT GaAs MESFET Si BiCMOS Si CMOS BiFET HBT InGaP HBT SiGe HBT Si BJT RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2012, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS120511 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. 1 of 11RF2317 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Device Current 250 mA Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Input RF Power +18 dBm tions is not implied. Output Load VSWR 20:1 The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Ambient Operating Temperature -40 to +85 C infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Storage Temperature -40 to +150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Specification Parameter Unit Condition Min. Typ. Max. T = +25C, I = 180mA, R = 10.2 , CC C Overall (50 ) 50 System Frequency Range DC 3000 MHz 3dB Bandwidth Gain 13.5 14.3 15.0 dB Noise Figure 4.9 dB From 100MHz to 1000MHz Input VSWR 1.7:1 Appropriate values for the DC blocking capaci- tors and bias inductor are required to maintain Output VSWR 2.3:1 this VSWR at the intended operating frequency range. Output IP +47 dBmAt 100MHz 3 +37 +42 dBm At 500MHz +37 dBm At 900MHz Output IP2 +55 dBm F = 400MHz, F = 500MHz, F = 100MHz 1 2 OUT Output P1dB +25.5 dBm At 100MHz +24 dBm At 500MHz +22 dBm At 900MHz Reverse Isolation 19.5 dB Thermal Theta 55 C/WI = 150mA, P = 1.2W, T = 85C JC CC DISS AMB Maximum Junction Temperature 150 C Mean Time To Failures 3100 years T = +85C AMB Theta 58 C/WI = 180mA, P = 1.5W, T = 85C JC CC DISS AMB Maximum Junction Temperature 175 C Mean Time To Failures 380 years T = +85C AMB Power Supply (50) Device Voltage 8.5 V On pin 13, I = 150mA CC 9.3 V On pin 13, I = 180mA CC Operating Current Range 100 180 200 mA Actual current determined by V and R CC C T = 25C, I = 180mA, R = 14.3 , CC C Overall (75 ) 75 System Frequency Range DC 3000 MHz 3dB Bandwidth Gain 15.0 dB Noise Figure 4.8 dB From 100MHz to 1000MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 11 support, contact RFMD at (+1) 336-678-5570 or customerservice rfmd.com. DS120511