RFUH10NS6SFHTL ROHM

Data Sheet Super Fast Recovery Diode RFUH10NS6S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Super Fast Recovery Applications RFUH10 General rectification NS6S Features LPDS 1)Ultra low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 600 V RM Reverse voltage V Direct voltage 600 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=64C 10 Io A (*1) Forward current surge peak I 60 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =10A 1.8 2.8 Forward voltage F F V V =600V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 15 25 ns F R R Thermal resistance Rth(j-c) Junction to case 3.0 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFUH10NS6S 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=75 C 1000 Tj=150 C Tj=125 C 100 Tj=25 C 1 Tj=75 C Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 3000 0 100 200 300 400 500 600 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 2000 1000 I =10A F V =600V R 1950 Tj=25 C Tj=25 C 1900 100 1850 1800 1750 10 AVE:1806mV AVE:32.3nA 1700 1650 1600 1 I DISPERSION MAP R V DISPERSION MAP F 180 1000 f=1MHz f=1MHz 175 V =0V R 170 Tj=25 C 165 100 160 155 150 AVE:157pF 10 145 140 135 130 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)