X-On Electronics has gained recognition as a prominent supplier of RFU02VS8SGTR Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFU02VS8SGTR Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFU02VS8SGTR ROHM

Name: RFU02VS8SGTR
Brand: ROHM
SKU: RFU02VS8SGTR_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

RFU02VS8SGTR electronic component of ROHM

RFU02VS8SGTR Diodes - General Purpose, Power, Switching

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See Product Specifications

Part No.	RFU02VS8SGTR
Manufacturer:	ROHM
Category:	Diodes - General Purpose, Power, Switching
Description:	Diode Switching 800V 0.2A 2-Pin TUMD-S T/R
Datasheet:	RFU02VS8SGTR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

293: USD 0.1136 ea
Line Total: USD 33.28

Availability - 0

MOQ: 293 Multiples: 1
Pack Size: 1

RFU02VS8SGTR More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 07 Feb to Thu. 13 Feb MOQ : 293 Multiples : 1	293 : USD 0.1136

Specifications

Manufacturer ROHM ROHM
Product Category Diodes - General Purpose, Power, Switching Diodes - General Purpose, Power, Switching
RoHS - XON 1 1
Mounting Style Surface Mount Surface Mount
Configuration Single Single
Vf - Forward Voltage 3 V 3 V
Packaging Tape And Reel Tape And Reel
Brand ROHM ROHM
Pin Count 2 2
Operating Temperature Classification military military
Operating Temp Range - 55 C To 150 C - 55 C To 150 C
Rad Hardened No No
Rev Recov Time 35 ns 35 ns
Peak Non-Repetitive Surge Current 1 A 1 A
Peak Rep Rev Volt 800(V) 800(V)
Rev Curr 10(Ua) 10(Ua)
Rectifier Type Switching Diode Switching Diode

We are delighted to provide the RFU02VS8SGTR from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFU02VS8SGTR and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Additional Infomation About Product

Super Fast Recovery Diode RFU02VS8S Datasheet Series Dimensions (Unit : mm) Land size figure (Unit : mm) Ultra Fast Recovery 0.170.1 1.1 0.05 1.30.05 Applications High frequency rectification TUMD2S Features 1)Small mold type.(TUMD2S) Structure cathode 2)high switching speed 0.80.05 0.60.2 0.1 ROHM : TUMD2S dot (year week factory) + day Construction anode Silicon epitaxial planer Taping dimensions (Unit : mm) 1.550.1 0.250.05 4.00.1 2.00.05 0 1.430.05 4.00.1 1.00.2 0 0.90.08 Absolute maximum ratings (Ta=25 C) Parameter Symbol Conditions Limits Unit Repetitive peak Reverse voltage V D0.5 800 V RM Reverse voltage V Direct voltage 800 V R Glass epoxy substrate mounted Average rectified forward current Io 0.2 A R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive I Forward current surge peak 1 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature C Tstg 55 to 150 Electrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V I =0.2A 2.2 3.0 V F F I V =800V Reverse current 0.01 10 A R R Reverse recovery time I =0.1A,I =0.1A,Irr=0.1I trr F R R 20 35 ns I =0.1A,I =0.2A,Irr=0.1I Reverse recovery time trr 13 25 ns F R R V =0V,f=1MHz Thermal capacitance Ct 4 pF R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.04 - Rev.B 1/4 Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 0.8 8.00.2 2.80.05 2.3Data Sheet RFU02VS8S 1 10000 Tj=150 C Tj=150 C 1000 Tj=125 C Tj=125 C 0.1 100 Tj=75 C Tj=25 C 0.01 Tj=75 C 10 Tj=25 C 1 0.001 01 234 0 200 400 600 800 REVERSE VOLTAGEV (V) R FORWARD VOLTAGEV (V) F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 2600 10 f=1MHz Tj=25 C 2500 I =0.2A F n=20pcs 2400 2300 1 2200 2100 2000 AVE:2139mV 1900 0.1 1800 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 10 1000 Tj=25 C 9 Tj=25 C f=1MHz V =800V R V =0V 8 R n=20pcs n=10pcs 7 100 6 5 4 10 3 AVE:26.8nA AVE:3.98pF 2 1 1 0 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.04 - Rev.B 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) REVERSE CURRENT:I (nA) F R TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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