X-On Electronics has gained recognition as a prominent supplier of RFN5TF8SFHC9 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFN5TF8SFHC9 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFN5TF8SFHC9 ROHM

RFN5TF8SFHC9 electronic component of ROHM
RFN5TF8SFHC9 ROHM
RFN5TF8SFHC9 Diodes - General Purpose, Power, Switching
RFN5TF8SFHC9  Semiconductors

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See Product Specifications
Part No. RFN5TF8SFHC9
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 800V VR 5A IO ITO-220AC; TO-220NFM
Datasheet: RFN5TF8SFHC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.35 ea
Line Total: USD 1.35 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 1.35
10 : USD 0.7596
100 : USD 0.6688

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RFN5TF8SFHC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFN5TF8SFHC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN5TF8SFH Serise Dimensions(Unit : mm) Structure Standard Fast Recovery Applications General rectification RFN5 TF8S Features 1)Low switching Loss 2)High current overload capacity Construction Silicon epitaxial planer type ROHM : O220NFM Manufacture Year Manufacture Week Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 800 V RM Reverse voltage V Direct voltage 800 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=106C 5 Io A Forward current surge peak I 60Hz half sin wave , Non-repetitive at Tj=25C 60 A FSM Junction temperature 150 Tj C Storage temperature Tstg 55 to 150 C Electrical Characteristics(Tj=25C) Parameter Conditions Min. Typ. Max. Symbol Unit V I =5A 1.6 2.1 Forward voltage F V F V =800V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 20 40 ns F R R Thermal resistance Rth(j-c) Junction to case 3.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFN5TF8SFH 100 100000 Tj=150 C 10000 Tj=125 C 10 1000 Tj=75 C Tj=150 C Tj=125 C Tj=25 C 100 Tj=75 C 1 Tj=25 C 10 1 0.1 0 200 400 600 800 0 500 1000 1500 2000 2500 3000 3500 FORWARD VOLTAGE:V (mV) F REVERSE VOLTAGE:V (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1000 1800 V =800V R I =5A F 1750 Tj=25 C Tj=25 C 1700 1650 AVE:75.0nA 100 1600 1550 AVE:1593mV 1500 1450 1400 10 I DISPERSION MAP R V DISPERSION MAP F 1000 180 f=1MHz f=1MHz 175 V =0V R 170 Tj=25 C 165 100 160 AVE:142pF 155 150 145 10 140 135 130 125 1 120 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) R Ct DISPERSION MAP V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) TERMINALS:Ct(pF) F FORWARD CURRENT:I (A) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) TERMINALS:Ct(pF) R REVERSE CURRENT:I (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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