GSD2004W www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage FEATURES Silicon epitaxial planar diode Fast switching diode, especially suited for applications requiring high voltage capability AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS GSD2004W-E3-08 or GSD2004W-E3-18 GSD2004W Single B6 Tape and reel GSD2004W-HE3-08 or GSD2004W-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V 240 V R Repetitive peak reverse voltage V 300 V RRM Forward current (continuous) I 225 mA F Repetitive peak forward current I 625 mA FRM t = 1 s I 4A p FSM Non-repetitive peak forward current t = 1 s I 1A p FSM (1) Power dissipation P 350 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Typical thermal resistance junction to ambient air R 357 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.8, 23-Feb-18 Document Number: 85729 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 GSD2004W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A V 300 V R (BR) V = 240 V I 100 nA R R Leakage current V = 240 V, T = 150 C I 100 A R j R I = 100 mA V 1V F F Forward voltage I = 20 mA V 0.83 0.87 V F F Diode capacitance V = V = 0, f = 1 MHz C 5pF F R D I = I = 30 mA, i = 3 mA, F R R Reverse recovery time t 50 ns rr R = 100 L PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 0.85 (0.033) 3.85 (0.152) 2.5 (0.098) 3.55 (0.140) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.8, 23-Feb-18 Document Number: 85729 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 0 to 8 1.35 (0.053) 1 (0.039) 0.65 (0.026) 0.2 (0.008) 0.45 (0.018) 1.7 (0.067) 1.40 (0.055) 0.15 (0.006) 0.10 (0.004) 0.1 (0.004) max. 0.85 (0.033)