GSD2004WS www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage FEATURES Silicon epitaxial planar diode Fast switching diode, especially suited for applications requiring high voltage capability AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS GSD2004WS-E3-08 or GSD2004WS-E3-18 GSD2004WS Single B6 Tape and reel GSD2004WS-HE3-08 or GSD2004WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V 240 V R Repetitive peak reverse voltage V 300 V RRM Forward current (continuous) I 225 mA F Peak repetitive forward current I 625 mA FRM t = 1 s I 4A p FSM Non-repetitive peak forward current t = 1 s I 1A p FSM (1) Power dissipation P 200 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Typical thermal resistance junction to R 650 K/W thJA (1) ambient air Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.1, 14-Jul-17 Document Number: 85730 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 GSD2004WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A V 300 V R BR V = 240 V I 100 nA R R Leakage current V = 240 V, T = 150 C I 100 A R j R I = 20 mA V 0.83 0.87 V F F Forward voltage I = 100 mA V 1V F F Diode capacitance V = V = 0, f = 1 MHz C 5pF F R D I = I = 30 mA, i = 3 mA, F R R Reverse recovery time t 50 ns rr R = 100 L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 250 T = 100 C j 100 200 150 10 25 C 100 1 50 0.1 0.01 0 0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 18864 T - Ambient Temperature (C) amb 18858 V - Forward Voltage (V) F Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 0.3 1000 100 0.2 DC current I F 10 Current (rectif.) I O 0.1 1 Reverse Voltage GSD2004WS V = 240 V R 0 0.1 0 30 60 90 120 150 0 40 80 120 160 200 18862 4 T - Junction Temperature (C) 18859 T - Ambient Temperature (C) amb j Fig. 2 - Admissible Forward Current vs. Ambient Temperature Fig. 4 - Leakage Current vs. Junction Temperature Rev. 2.1, 14-Jul-17 Document Number: 85730 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I , I - Admissible Forward Current (A) I - Forward Current (mA) F OF I (T )/I (25 C) - Leakage Current P - Admissible Power Dissipation (mW) R j R tot