TS4148C RCG Taiwan Semiconductor

TS4148C Taiwan Semiconductor 100mA, 75V Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 100 mA F High surge current capability V 75 V RRM Moisture sensitivity level: level 1, per J-STD-020 I 0.8 A Compliant to RoHS directive 2011/65/EU and FSM in accordance to WEEE 2002/96/EC V at I =10mA 1.00 F F V Halogen-free according to IEC 61249-2-21 V at I =100mA 1.25 F F T Max. 150 C J APPLICATIONS Package 0603 (Ceramics) Switching mode power supply (SMPS) Configuration Single die Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: 0603(Ceramics) Molding compound meets UL flammability classification rating 94HB Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 2.7 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Repetitive peak reverse voltage V 75 V RRM Mean forward current I 100 mA F at t1s 0.4 Non-repetitive peak forward surge I A FSM current at t8.3ms 0.8 Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG 1 Version: G1809 TS4148C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP. UNIT Junction-to-ambient thermal resistance R 375 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT I =10mA, T =25C - 1.00 F J (1) Forward voltage per diode V V F I =100mA, T =25C 1.25 - F J V =20V T =25C - 25 R J nA Reverse current rated V per R I R (2) diode V =75V T =25C 5 - A R J I =10mA, I =10mA, F R 4 Reverse recovery time t - ns rr R =100 L 1 MHz, V =0V 4 Junction capacitance C - pF R J Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING 5K / 7 Reel TS4148C RZG 0603 10K / 13 Reel TS4148C RCG 2 Version: G1809