TS4148 RWG Taiwan Semiconductor

TS4148 RWG 350mW High Speed SMD Switching Diode Small Signal Diode 1005 A D B C Features Designed for mounting on small surface. Extremely thin/leadless package High mounting capability,strong surage with stand, high reliability. Pb free version and RoHS compliant Halogen free E Unit (mm) Unit (inch) Mechanical Data Dimensions Case :1005 standard package, molded plastic Min Max Min Max A 2.40 2.60 0.095 0.102 Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed B 1.10 1.30 0.043 0.051 High temperature soldering guaranteed: 260C/10s C 0.70 0.90 0.027 0.035 Polarity : Indicated by cathode band D Typ. 0.50 Typ. 0.020 Weight : 0.006 gram (approximately) E Typ. 1.00 Typ. 0.040 Ordering Information Part No. Packing Package TS4148 RWG 4Kpcs / 7 Reel 1005 Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Power Dissipation PD 350 mW Non-Repetitive Peak Reverse Voltage VRSM 100 V Repetitive Peak Reverse Voltage VRRM 75 V Repetitive Peak Forward Current IFRM 300 mA Mean Forward Current IO 150 mA Non-Repetitive Peak Forward Surge Current Pulse Width= 1 sec IFSM 4.0 A Pulse Width= 1.0 1 msec Thermal Resistance (Junction to Ambient) (Note 1) RJA 500 C/W Junction and Storage Temperature Range TJ, TSTG -40 to + 125 C Electrical Characteristics Type Number Symbol Min Max Units V(BR) - 75 V Reverse Breakdown Voltage (Note 2) Forward Voltage IF= 50mA VF - 1.00 V VR= 20V - 25 nA Reverse Leakage Current IR VR= 75V - 2.5 A Junction Capacitance VR=0, f=1.0MHz CJ 4.0 pF Reverse Recovery Time (Note3) Trr 4 ns Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IR=100A Notes:3. Test Condition : IF=IR=30mA, RL=100, IRR=3mA Version : D10 TS4148 RWG 350mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics FIG 2 Reverse Current vs Reverse Voltage 1000 100 100 10 Ta=25C Ta=25C 10 1 1 0.1 0.1 0.01 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 Reverse Voltage (V) Instantaneous Forward Voltage (V) FIG 3 Admissible Power Dissipation Curve FIG 4 Typical Junction Capacitance 350 5 280 4 210 3 140 2 70 1 0 0 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 Reverse Voltage (V) Ambient Temperature (C) FIG 5 Forward Resistance vs. Forward Current 10000 1000 100 10 1 0 0 1 10 100 Forward Current (mA) Version : D10 Dynamic Forward Resistance ( ) Power Dissipation (mW) Instantaneous Forward Current (mA) Junction Capacitance (pF) Reverse Current (uA)