X-On Electronics has gained recognition as a prominent supplier of HFA35HB60 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. HFA35HB60 Diodes - General Purpose, Power, Switching are a product manufactured by Infineon. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

HFA35HB60 Infineon

HFA35HB60 electronic component of Infineon
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Part No.HFA35HB60
Manufacturer: Infineon
Category: Diodes - General Purpose, Power, Switching
Description: Diode Switching 600V 22A 3-Pin(3+Tab) TO-254AA
Datasheet: HFA35HB60 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 248.2418 ea
Line Total: USD 248.24 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 248.2418
10 : USD 233.5459
25 : USD 233.5459

   
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RoHS - XON
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We are delighted to provide the HFA35HB60 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HFA35HB60 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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PD-20379C HFA35HB60 HEXFRED V = 600V ULTRAFAST, SOFT RECOVERY DIODE R V = 1.75V F Q = 380nC rr Features di /dt = 400A/s (rec)M Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetically Sealed Ceramic Eyelets Description HFA35HB60 is part of the International Rectifier HiRel family of products. These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The soft- ness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Absolute Maximum Ratings Characteristics Characteristics Max. Units V D.C. Reverse Voltage 600 V R I @ T = 100C Continuous Forward Current 22 A F C I @ T = 25C Single Pulse Forward Current 225 A FSM C P @ T = 25C Maximum Power Dissipation 83 W D C T , T Operating Junction and Storage Temperature Range -55 to 150 C J STG Notes: D.C. = 50% rectangle wave 1/2 sine wave, 60Hz, Pulse Width = 8.33ms PIN ASSIGNMENTS CASE STYLE TO-254AA 1 2018-03-02 International Rectifier HiRel Products, Inc. HFA35HB60 Electrical Characteristics @ T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions V Cathode Anode Breakdown Voltage 600 V I = 100A BR R 1.55 I = 22A, T = -55C F J 1.75 V I = 22A, T = 25C F J V Max. Forward Voltage See Fig. 1 FM 2.25 I = 45A, T = 25C F J 1.64 I = 22A, T = 125C F J I Max. Reverse Leakage Current 10 A V V Rated RM R R See Fig. 2 1.0 mA V 480V T = 125C R J C Junction Capacitance, See Fig. 3 56 59 pF V 200V T R Measured from center of bond pad to L Series Inductance 8.7 nH S end of anode bonding wire Dynamic Recovery Characteristics @ T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Test Conditions t rr1 Reverse Recovery Time 60 97 T = 25C J ns I = 22A F t See Fig. 5 110 165 T = 125C rr2 J I RRM1 Peak Recovery Current 5.2 11 T = 25C J A V = 200V R I RRM2 See Fig. 6 8.5 13 T = 125C J 190 380 T = 25C Q Reverse Recovery Charge rr1 J nC di /dt = 200A/s f See Fig. 7 Q 560 840 T = 125C rr2 J di /dt1 Peak Rate of Fall of Recovery Current 270 400 T = 25C (rec)M J A/s di /dt1 During tb - See Fig. 8 170 250 T = 125C (rec)M J Thermal - Mechanical Characteristics Parameter Typ. Max. Units Junction-to-Case, Single Leg Conducting R JC 1.5 C/W Wt Weight 9.3 g 2 2018-03-02 International Rectifier HiRel Products, Inc.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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