X-On Electronics has gained recognition as a prominent supplier of BAV23C-HE3-18 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV23C-HE3-18 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV23C-HE3-18 Vishay

BAV23C-HE3-18 electronic component of Vishay
BAV23C-HE3-18 Vishay
BAV23C-HE3-18 Diodes - General Purpose, Power, Switching
BAV23C-HE3-18  Semiconductors

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Part No. BAV23C-HE3-18
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 250 Volt 200mA 50ns Dual Common Cathode
Datasheet: BAV23C-HE3-18 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3676 ea
Line Total: USD 0.37 
Availability - 9342
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9342
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3676
10 : USD 0.2539
100 : USD 0.1555
500 : USD 0.0883
1000 : USD 0.0649
2500 : USD 0.0564
5000 : USD 0.05
10000 : USD 0.0447
20000 : USD 0.0383

   
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We are delighted to provide the BAV23C-HE3-18 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV23C-HE3-18 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV23C www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES Silicon epitaxial planar diode 3 Fast switching dual diode with common cathode AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial 12 grade 18108 1 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAV23C-E3-08 or BAV23C-E3-18 BAV23C Common cathode KT6 Tape and reel BAV23C-HE3-08 or BAV23C-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V 200 V R Repetitive peak reverse voltage V 250 V RRM Non-repetitive peak forward current t = 1 s I 9A FSM Non-repetitive peak forward surge current t = 1 s I 0.5 A FSM (1) Maximum average forward rectified current I 200 mA F(AV) (2) Forward continuous current I 400 mA F 625 mA Repetitive peak forward current I FRM (2) Power dissipation P 350 mW tot Notes (1) Measured under pulse conditions pulse time = t 0.3 ms p (2) Device on fiberglass substrate THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 357 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate Rev. 1.5, 13-Feb-18 Document Number: 81902 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV23C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A, t = 300 ms V 250 V R p (BR) I = 100 mA V 1V F F Forward voltage I = 200 mA V 1.25 V F F V = 200 V I 100 nA R R Reverse current V = 200 V, T = 150 C I 100 A R j R Dynamic forward resistance I = 10 mA r 5 F f Diode capacitance V = 0 V, f = 1 MHz C 5pF R D I = I = 30 mA, R = 100 F R L Reverse recovery time t 50 ns rr i = 3 mA R 500 450 400 350 300 250 200 150 100 50 0 0 50 100 150 T (C) amb Fig. 1 - P - Admissible Power Dissipation vs. Ambient Temperature tot 100 10 1 T = 25 C - prior to surge j 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 Test pulse t (s) p Fig. 2 - I - Non-Repetitive Peak Forward Current vs. Pulse Duration - Maximum Admissible Values of Square Pulses FSM Rev. 1.5, 13-Feb-18 Document Number: 81902 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I (A) FSM P (mW) tot

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC COMPONENTS
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GS
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Vishay / Cera-Mite
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Vishay Huntington Electric Inc.
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