X-On Electronics has gained recognition as a prominent supplier of BAV70-HE3-18 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV70-HE3-18 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV70-HE3-18 Vishay

BAV70-HE3-18 electronic component of Vishay
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Part No.BAV70-HE3-18
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Vishay Semiconductors Diodes - General Purpose, Power, Switching 70 Volt 250mA 2.0 Amp IFSM
Datasheet: BAV70-HE3-18 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3086 ea
Line Total: USD 0.31 
Availability - 11047
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11047
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3086
10 : USD 0.2329
100 : USD 0.0898
1000 : USD 0.0547
2500 : USD 0.0477
10000 : USD 0.0393
20000 : USD 0.0365
50000 : USD 0.035
100000 : USD 0.0337

   
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We are delighted to provide the BAV70-HE3-18 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV70-HE3-18 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV70 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES Silicon epitaxial planar diode 3 Fast switching dual diode with common cathode AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial 12 grade 18108 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAV70-E3-08 or BAV70-E3-18 BAV70 Common cathode JJ Tape and reel BAV70-HE3-08 or BAV70-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Peak reverse voltage V 70 V RRM Reverse voltage V 70 V R Forward current (continuous) I 250 mA F t = 1 s I 2A p FSM Non repetitive peak forward current t = 1 ms I 1A p FSM t = 1 s I 0.5 A p FSM (1) Power dissipation P 350 mW tot Note (1) Device on fiberglass substrate THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate Rev. 2.2, 13-Feb-18 Document Number: 85546 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV70 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 0.855 V F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 70 V I 2500 nA R R Reverse current V = 70 V, T = 150 C I 50 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = 0 V, f = 1 MHz C 1.5 pF R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISICS (T = 25 C, unless otherwise specified) amb 1000 2 10 D = 0.005 0.01 0.02 100 0.05 1 10 0.1 T = 100 C j 0.2 / 10 FM 25 C 0 10 1 -1 10 0.1 t p t p D = T -2 T 10 0.01 -6 -5 -4 -3 -2 -1 -0 10 10 10 10 10 10 10 s 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 22290 t 14356 V - Forward Voltage (V) F Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak forward current/ = f (t ) FM p Rev. 2.2, 13-Feb-18 Document Number: 85546 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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