X-On Electronics has gained recognition as a prominent supplier of BAW56-E3-08 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAW56-E3-08 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAW56-E3-08 Vishay

BAW56-E3-08 electronic component of Vishay
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Part No.BAW56-E3-08
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 70V 250mA 2A IFSM Dual Common Anode
Datasheet: BAW56-E3-08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1879 ea
Line Total: USD 0.19 
Availability - 17589
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9557
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1177
10 : USD 0.0766
25 : USD 0.076
100 : USD 0.0409
250 : USD 0.0404
500 : USD 0.0399
1000 : USD 0.0389
3000 : USD 0.0377
6000 : USD 0.0367

17589
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1879
10 : USD 0.1234
100 : USD 0.0671
1000 : USD 0.0631
2500 : USD 0.0457
45000 : USD 0.0349
90000 : USD 0.0336

9557
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 256
Multiples : 1
256 : USD 0.0564
500 : USD 0.0422
1000 : USD 0.0403
3000 : USD 0.0384
6000 : USD 0.0367

   
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RoHS - XON
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Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
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Pd - Power Dissipation
Operating Temperature Range
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Maximum Diode Capacitance
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We are delighted to provide the BAW56-E3-08 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAW56-E3-08 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAW56 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES Silicon epitaxial planar diode 3 Fast switching dual diode with common anode AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade 1 2 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAW56-E3-08 or BAW56-E3-18 BAW56 Common anode JD Tape and reel BAW56-HE3-08 or BAW56-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage = working peak reverse voltage V = V 70 V R RRM = DC blocking voltage Forward continuous current I 250 mA F t = 1 s I 2A p FSM Non repetitive peak forward current t = 1 ms I 1A p FSM t = 1 s I 0.5 A p FSM (1) Power dissipation P 350 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate, see layout Rev. 2.1, 13-Feb-18 Document Number: 85549 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAW56 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 0.855 V F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 70 V I 2500 nA R R Reverse current V = 70 V, T = 150 C I 100 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = V = 0 V, f = 1 MHz C 2pF F R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 2 1000 10 D = 0.005 0.01 0.02 100 0.05 1 10 0.1 T = 100 C 0.2 j / 10 FM 25 C 0 10 1 -1 10 0.1 t p t p D = T T -2 0.01 10 -6 -5 -4 -3 -2 -1 -0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 10 10 10 10 10 10 s 14356 V Forward Voltage (V) - F 22290 t Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak Forward Current I = f (t ) FM p Rev. 2.1, 13-Feb-18 Document Number: 85549 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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