BAW56-V
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Vishay Semiconductors
Small Signal Switching Diode, Dual
FEATURES
Silicon epitaxial planar diode
3
Fast switching dual diode with common anode
This diode is also available in other
configurations including: a single with type
designation BAL99, a dual anode to cathode with
type designation BAV99, and a dual common
1 2
cathode with type designation BAV70
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
BAW56-V BAW56-V-GS18 or BAW56-V-GS08 JD Dual diodes common anode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage
= Working peak reverse voltage V = V 70 V
R RRM
= DC Blocking voltage
Forward continuous current I 250 mA
F
t = 1 s I 2A
p FSM
Non repetitive peak forward current t = 1 ms I 1A
p FSM
t = 1 s I 0.5 A
p FSM
(1)
Power dissipation P 350 mW
tot
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air R 430 K/W
thJA
Junction temperature T 150 C
j
Storage temperature range T - 65 to + 150 C
stg
Note
(1)
Device on fiberglass substrate, see layout
Rev. 1.8, 29-Jan-13 Document Number: 85549
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000BAW56-V
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I = 1 mA V 715 mV
F F
I = 10 mA V 855 mV
F F
Forward voltage
I = 50 mA V 1000 mV
F F
I = 150 mA V 1250 mV
F F
V = 70 V I 2.5 A
R R
Reverse current V = 70 V, T = 150 C I 100 A
R j R
V = 25 V, T = 150 C I 30 A
R j R
Diode capacitance V = V = 0 V, f = 1 MHz C 2pF
F R D
I = 10 mA to i = 1 mA,
F R
Reverse recovery time t 6ns
rr
V = 6 V, R = 100
R L
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
2
1000
10
D = 0.005
0.01
0.02
100
0.05
1
10 0.1
T = 100 C 0.2
j
/
10
FM
25 C
0
10
1
-1
10
0.1
t
p
t
p
D =
T
T
-2
0.01
10
-6 -5 -4 -3 -2 -1 -0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10 10 10 10 10 10 10
s
14356 V Forward Voltage (V)
-
F 22290 t
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak Forward Current I = f (t )
FM p
Rev. 1.8, 29-Jan-13 Document Number: 85549
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Forward Current (mA)
F