BAW56 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES Silicon epitaxial planar diode 3 Fast switching dual diode with common anode AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade 1 2 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAW56-E3-08 or BAW56-E3-18 BAW56 Common anode JD Tape and reel BAW56-HE3-08 or BAW56-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage = working peak reverse voltage V = V 70 V R RRM = DC blocking voltage Forward continuous current I 250 mA F t = 1 s I 2A p FSM Non repetitive peak forward current t = 1 ms I 1A p FSM t = 1 s I 0.5 A p FSM (1) Power dissipation P 350 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate, see layout Rev. 2.1, 13-Feb-18 Document Number: 85549 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAW56 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 0.855 V F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 70 V I 2500 nA R R Reverse current V = 70 V, T = 150 C I 100 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = V = 0 V, f = 1 MHz C 2pF F R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 2 1000 10 D = 0.005 0.01 0.02 100 0.05 1 10 0.1 T = 100 C 0.2 j / 10 FM 25 C 0 10 1 -1 10 0.1 t p t p D = T T -2 0.01 10 -6 -5 -4 -3 -2 -1 -0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 10 10 10 10 10 10 s 14356 V Forward Voltage (V) - F 22290 t Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak Forward Current I = f (t ) FM p Rev. 2.1, 13-Feb-18 Document Number: 85549 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F