BAW62,113 NXP

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAW62 High-speed diode Product data sheet 1996 Sep 17 Supersedes data of April 1996 NXP Semiconductors Product data sheet High-speed diode BAW62 FEATURES DESCRIPTION Hermetically sealed leaded glass The BAW62 is a high-speed switching diode fabricated in planar technology, SOD27 (DO-35) package and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: handbook, halfpagek a max. 75 V Repetitive peak forward current: MAM246 max. 450 mA. The diode is type branded. APPLICATIONS Fig.1 Simplified outline (SOD27 DO-35) and symbol. High-speed switching Fast logic applications. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V repetitive peak reverse voltage 75 V RRM V continuous reverse voltage 75 V R I continuous forward current see Fig.2 note 1 250 mA F I repetitive peak forward current 450 mA FRM I non-repetitive peak forward current square wave T = 25 C prior to FSM j surge see Fig.4 t = 1 s 4 A t = 1 ms 1 A t = 1 s 0.5 A P total power dissipation T = 25 C note 1 350 mW tot amb T storage temperature 65 +200 C stg T junction temperature 200 C j Note 1. Device mounted on an FR4 printed circuit-board lead length 10 mm. 1996 Sep 17 2