BGX50A... Silicon Switching Diode Array Bridge configuration High-speed switching diode chip 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BGX50A Type Package Configuration Marking BGX50A SOT143 bridge U1s Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 50 V Diode reverse voltage V R 70 Peak reverse voltage V RM 140 mA Forward current I F Non-repetitive peak surge forward current I - FSM 210 mW Total power dissipation P tot T 74C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 360 thJS BGX50A 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-03-27BGX50A... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics - - - Breakdown voltage V (BR) Reverse current I A R V = 50 V - - 0.2 R V = 50 V, T = 150 C - - 100 R A - - 1.3 V Forward voltage V F I = 100 mA F AC Characteristics - - 1.5 pF Diode capacitance C T V = 0 V, f = 1 MHz R Reverse recovery time t - - 6 ns rr I = 10 mA, I = 10 mA, measured at I = 1mA , F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 100ns, D = 0.05, t = 0.6ns, p r R = 50 i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, C 1pF r EHN00019 2 2007-03-27