BAV70-V
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Vishay Semiconductors
Small Signal Switching Diode, Dual
FEATURES
Silicon Epitaxial Planar Diode
3
Fast switching dual diode with common cathode
This diode is also available in other
configurations including: a dual with type
designation BAV99-V, a dual common anode
12 with type designation BAW56-V, and a single
diode with type designation BAL99-V
18108
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART ORDERING CODE TYPE MARKING INT. CONSTRUCTION REMARKS
BAV70-V BAV70-GS18 or BAV70-V-GS08 JJ Dual common cathode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Peak reverse voltage V 70 V
RRM
Reverse voltage V 70 V
R
Forward current (continuous) I 250 mA
F
t = 1 s I 2A
p FSM
Non repetitive peak forward current t = 1 ms I 1A
p FSM
t = 1 s I 0.5 A
p FSM
(1)
Power dissipation P 350 mW
tot
Note
(1)
Device on fiberglass substrate, see layout
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
(1)
Thermal resistance junction to ambient air R 430 K/W
thJA
Junction temperature T 150 C
j
Storage temperature range T = T - 65 to + 150 C
J stg
Note
(1)
Device on fiberglass substrate, see layout
Rev. 1.9, 30-Jan-13 Document Number: 85546
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000BAV70-V
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I = 1 mA V 0.715 V
F F
I = 10 mA V 0.855 V
F F
Forward voltage
I = 50 mA V 1V
F F
I = 150 mA V 1.25 V
F F
V = 70 V I 2500 nA
R R
Reverse current V = 70 V, T = 150 C I 50 A
R j R
V = 25 V, T = 150 C I 30 A
R j R
Diode capacitance V = 0 V, f = 1 MHz C 1.5 pF
R D
I = 10 mA to i = 1 mA,
F R
Reverse recovery time t 6ns
rr
V = 6 V, R = 100
R L
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
1000
100
T = 100 C
j
10
25 C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356 V - Forward Voltage (V)
F
Fig. 1 - Forward Current vs. Forward Voltage
2
10
D = 0.005
0.01
0.02
0.05
1
10 0.1
0.2
/
FM
0
10
-1
10
t
p
t
p
D =
T
-2 T
10
-6 -5 -4 -3 -2 -1 -0
10 10 10 10 10 10 10
s
22290 t
Fig. 2 - Peak forward current/ = f (t )
FM p
Rev. 1.9, 30-Jan-13 Document Number: 85546
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Forward Current (mA)
F