X-On Electronics has gained recognition as a prominent supplier of BAV70VGS08 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV70VGS08 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV70VGS08 Vishay

BAV70VGS08 electronic component of Vishay
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Part No.BAV70VGS08
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching RECOMMENDED ALT 78-BAV70-E3-08
Datasheet: BAV70VGS08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
295: USD 0.1785 ea
Line Total: USD 52.66 
Availability - 0
MOQ: 295  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 295
Multiples : 1
295 : USD 0.1785
500 : USD 0.1765
1000 : USD 0.1323

   
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RoHS - XON
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Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the BAV70VGS08 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV70VGS08 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV70-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES Silicon Epitaxial Planar Diode 3 Fast switching dual diode with common cathode This diode is also available in other configurations including: a dual with type designation BAV99-V, a dual common anode 12 with type designation BAW56-V, and a single diode with type designation BAL99-V 18108 AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE TYPE MARKING INT. CONSTRUCTION REMARKS BAV70-V BAV70-GS18 or BAV70-V-GS08 JJ Dual common cathode Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Peak reverse voltage V 70 V RRM Reverse voltage V 70 V R Forward current (continuous) I 250 mA F t = 1 s I 2A p FSM Non repetitive peak forward current t = 1 ms I 1A p FSM t = 1 s I 0.5 A p FSM (1) Power dissipation P 350 mW tot Note (1) Device on fiberglass substrate, see layout THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 150 C j Storage temperature range T = T - 65 to + 150 C J stg Note (1) Device on fiberglass substrate, see layout Rev. 1.9, 30-Jan-13 Document Number: 85546 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000BAV70-V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 0.855 V F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 70 V I 2500 nA R R Reverse current V = 70 V, T = 150 C I 50 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = 0 V, f = 1 MHz C 1.5 pF R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 100 T = 100 C j 10 25 C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 14356 V - Forward Voltage (V) F Fig. 1 - Forward Current vs. Forward Voltage 2 10 D = 0.005 0.01 0.02 0.05 1 10 0.1 0.2 / FM 0 10 -1 10 t p t p D = T -2 T 10 -6 -5 -4 -3 -2 -1 -0 10 10 10 10 10 10 10 s 22290 t Fig. 2 - Peak forward current/ = f (t ) FM p Rev. 1.9, 30-Jan-13 Document Number: 85546 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 I - Forward Current (mA) F

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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